S4 4C Search Results

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L

intel dq67 circuit diagram

Abstract: HYM72V12C756BLS4-P HYM72V12C756BLS4-S HYM72V12C756BS4-S RA12
Contextual Info: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six

PC133 SDRAM registered DIMM 512MB hynix

Abstract: HYM72V12C736BLS4-H HYM72V12C736BLS4-K HYM72V12C736BS4-H HYM72V12C736BS4-K RA12 BYTE65
Contextual Info: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six

APQ8064

Abstract: i2c/qualcomm uart IFC6400
Contextual Info: IFC6400 Snapdragon S4 Pro Qseven™ Computing Platform Processing, Power, and Performance • Qualcomm Snapdragon S4 Pro APQ8064 • 4-core Krait , 1.7GHz, 2MB L2 cache  2 GB on-board DDR3 PCDDR 533MHz  Independent Clock Scaling Per Core

RH96N74

Contextual Info: TOCOS 33 mII B% Messrs TOCOS AMERICA ,INC. & $ Model Carbon film variable resistor rn;f.fif#S4 Customer Specification Number @4i#MS8 Customer Part Name B%$P&S4 Customer Part Number %%R58 TOCOS Part Name %4kif#S 4 TOCOS Specification Number RY -7 7 2 8 R E

Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"

PC133 SDRAM registered DIMM 512MB hynix

Contextual Info: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in

Contextual Info: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in

rcas 4250

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726C L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726C(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726C(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

RT 5510

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

DDR200

Abstract: DDR266A DDR266B du 7670
Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

DDR200

Abstract: DDR266A DDR266B
Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy

DL1414T

Abstract: DL1414 DL-1414T DL1414T display arklone p garry DIP SOCKET SIEMENS 8080 circuit using dl1414t dl 1414t HOYA Optics
Contextual Info: SIEMENS DL1414T .112" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display*0 With Memory/Decoder/Driver Package Dimensions in Inches [Tim f7 lolt'UHICÌ.! xx I n I & S4) XXX t 00S ( 1?7 ) FEATURES 0.112" High, Magnified Monolithic Character

RH96N74

Abstract: JIS-C-6443
Contextual Info: Specifications m31J %%% & #& 6 Model Carbon film variable resistor rnw~s4 Customer Specification Number @P+k#aZ& Customer Part Name rn%%fiS4 Customer Yart Number R+kRS& TOCOS Part Name %+i.ffBS% TOCOS Specification Number RY -7 7 2 7 f % E P . ) % W Signed by

Contextual Info: HYMD525G726B P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4

DDR200

Abstract: DDR266 DDR266A DDR266B YMD525G726A
Contextual Info: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L Document Title 256Mx72 bits Registered DDR SDRAM DIMM Revision History No. History Draft Date 0.1 Initial draft Jan. 2003 0.2 1) Corrected IDD Spec. 2) Defined Pin Cap. Spec. 3) Corrected some typos

Contextual Info: HYMD212G726D P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4

ACS9010

Abstract: XTAL 32.768MHz 8B10B ACS4050 ACS405CS 3.2768MHz crystal
Contextual Info: ACS405CS Main Features * Full duplex serial transmission through a single fiber-optic cable without the need for expensive WDM devices. AC S4 05 CS 4000 SERIES Acapella Optical Modem IC * E2 data-rates of 8.448Mbps or 4*E1 at 2.048Mbps. T2 data rates of 6.312Mbps or 4*T1 at 1.544Mbps.

Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,

Contextual Info: F-206-1 Te c M ODS-F-8P8C-L-S4-Y-G-TH MODS-F-8P8C-S-4-5-SM MODS-F-8P8C-U-6-1-TH MOD JACK WITH LEDS MODS-F SERIES For complete specifications and recommended PCB layouts see www.samtec.com?MODS-F Insulator Material: Nylon 46 For both -SM and -TH Contact Material:

NTE4049

Abstract: NTE4051B NTE4050B NTE4060B NTE4056B NTE4053B NTE4052B NTE4045B NTE4046B NTE4047B
Contextual Info: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4044B 16-Lead DIP, See Diag. 249 Quad 3-State NAND R/S Latch Q4 r i N.C. g si B - R1 Q Enable M R2 □ S2 B VssM ^ 0 Vdd 0 S4 Q R4 0 Q1 g R3 001 Phase Pulses Sn B 0 0 2 Phase Comp 1 Out Q VDD

S4 9C

Abstract: 10D 9F 11010 2f 1001 S4 1C LCM103 LCM109 100-10 k1 d2s3
Contextual Info: LCM109 大型仪表控制柜液晶显示模块 1 LCM109 内存 RAM 对应显示笔段表 8.左→右为 1→10 位,P 为小数点,S 为三角箭头,K 为 D3 S4 1D 1DP 2D 2DP 3D 3DP 4D 4DP 5D 5DP 6D 6DP 7D 7DP 8D D2 S3 1E 1C 2E 2C 3E 3C 4E 4C 5E 5C 6E 6C 7E