S4 1C Search Results

dataman s4

Abstract: DATAMAN S3 POWER SUPPLY DATAMAN S3 Programmer HM66205L 00000-1FFFF AMD 2716 2716 eprom manual programming by switch 2716 prom Dataman S3 AMD PROM burning
Contextual Info: DATAMAN S4 MANUAL Introduction to S4 DATAMAN S4 is a battery-powered PROM programmer for Microsystem Designers. It can readily be used for production programming too.S4 contains 128k, 256k or 512k of RAM which retains data and configuration even when switched off. The

T-78

Abstract: quanta PC97551 PHKD13N03LT C305 RN138 usb QUANTA GFX AR208 C5343 lm3931
Contextual Info: 1 2 3 4 5 6 7 8 Voltage Rails PWR_SRC Primary DC system power supply 3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail 5VSUS 5V switched power rail ( off in S4-S5 ) +5V 5V switched power rail ( off in S3-S5 )

ABB flow sensor SE41F

Abstract: 10DS3111 D674A FSM4000-SE41F FSM4000-SE21F FSM4000 FSM4000-SE21 D174D 10D14 D184B140U02
Contextual Info: Operating Instruction D184B140U02 Valid for software versions C.10 and higher Model FSM4000-SE41F FSM4000-SE21 FSM4000-SE21F FSM4000-S4 Electromagnetic Flowmeter FSM4000 Blinder Text Electromagnetic Flowmeter FSM4000 Operating Instruction D184B140U02 08.2010

LPDDR2 SDRAM micron

Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V

MT42L256M32D2

Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V

SMD MARKING CODE sdp

Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V

mt42l128M32

Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

MT42L64M64D2

Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

lpddr2 DQ calibration

Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

216-ball

Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Contextual Info: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die

"Angle Sensor"

Abstract: angle position sensors Q62705-K5002
Contextual Info: Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Injection flash 0.1 max Features

siemens gmr

Abstract: magnetic field sensor siemens siemens gmr s4 GMR sensor thermal conductivity sensor siemens GMR sensor magnetic
Contextual Info: SIEMENS Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor on copper

KS74AHCT74

Contextual Info: SAMSUNG SEMICONDUCTOR INC OS *7A 1* KS54AHCT KS74AHCT Dual D-Type Positive-Edge-Triggered Flip-Flops with Preset and Clear DESCRIPTION FEATURES ' • Function, pin-out, speed and drive compatibility with S4/74ALS logic family • Low power consumption characteristic of CMOS

gmr sensor

Abstract: Q62705-K5002
Contextual Info: Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. 12.3 2.3 11.7 2.1 Chip center 0.55 ±0.15

Contextual Info: SN54LS15, SN54S15, SN74LS15, SN74S15 TRIPLE 3-INPUT POSITIVE AND GATES WITH OPEN-COLLECTOR OUTPUTS APRIL 1985 — REVISED MARCH 1988 SN 54LS15, SN S4 S15 J OR W PACKAG E SN 74LS1S. SN 7 4S1 5 . . . D OR N PACKAGE ITO P V IE W 1AC r c n 4pVcc 2AC 1C 31Y 2BC

TIC-L004-11

Abstract: TIC-L006-11 TIC-L002-11 TIC-L009-11
Contextual Info: Features: 1. Meets IEEE 802.3 and ANSI X3.263 2. Operating Temperature: 0 C ° to +85 C ° 3. 1500Vrms Isolation 4. Enhanced Common Mode Attenuation for maximum EMI Suppression 5. Full Product Qualification Tests 3D Package View S1 S2 S3 S4 Product Selection

Contextual Info: SIEMENS Giant Magneto Resistive Position Sensor S4 Preliminary Data Version 1.0 This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor on copper

Contextual Info: HYMD525G726B P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4

XF0013QS4

Abstract: 208H
Contextual Info: 1. M echanical D im ensions: 3. E lectrical Specification s: 25°C 0.730 Max Isolation: 1500 Vrms PRI to SEC c 3.240 TX Turns Ratio: 1CT:2CT (PRI:SEC) RCV Turns Ratio: 1CT:2CT (PRI:SEC) 0.045 0.025 -it 0 .0 0 4 J Min E 0.050 XF MRS WWW X o 2 m Qo XF0013Q S4

MT42L256M32D2

Abstract: MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 MT42L256M64D4 mt42L256m16 LPDDR2 SDRAM micron LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die

M1012

Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die

Contextual Info: HYMD212G726D P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4

S4 DIODE

Contextual Info: 0 G lû 3 b 2 L IO • MITSUBISHI OPTICAL DEVICES FU-52SDU-F2/S2/F4/S4 DUPLEXER MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 um LD AND 1.3 miti PD) DESCRIPTION FEATU RES Duplexer module FU-52SDU series incorporate a 1.3um laser diode, an InGaAs photodiode and

ICM4712701

Abstract: application of RF robot SFG455A3 rmc npo capacitor ne616 SCB-1320Z TOKO 455KHz ceramic filter 5.5MHz ceramic Filter SA616 NE615
Contextual Info: PHILIPS INTERNATIONAL 71iafl2b GD53b7M S4? « P H I N bOE » Product spaclflcatlon Philips Semiconductors RF Communications Products NE/SA616 Low-voltage high performance mixer FM IF system " P -7 4 - U - o DESCRIPTION The NE/SA616 is a low-voltage high performance monolithic FM IF system