S30D Search Results

S30D30

Abstract: S30D60 IR V 2238
Contextual Info: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: INTERNATIONAL RECTIFIER 05 DF|MfiSS4S2 0 0 0 7 t . 3 Data Sheet No. PD-3.130 IIO R I in te r n a tio n a l r e c t if ie r S30D & S30DH SERIES 1200-600 VOLTS RANGE 440 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE

Contextual Info: I«R Data Sheet No. PD-3.131 in t e r n a t io n a l r e c t if ie r INTERNATIONAL RECTIFIER D5 dF | 40SS45E D0D7bh3 E |~ S30D SERIES 1600-1000 VOLTS RANGE 430 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs O VOLTAGE RATINGS VOLTAGE COOE

s300h

Contextual Info: I N T E R N A T IONAL RECTIFIER I« R | ~D5 DÌf| 4fl554SE 00D7b7S T 1 ~ T ~ /? Jata Sheet No. PD-3.129 in t e r n a t io n a l. r e c t if ie r S30D & S30DH SERIES 800-200 VOLTS RANGE 470 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs

Contextual Info: S30D30DJ Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current30 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TO-3P Package Weight mg 5600 Product Group Type No. S16D30C – S16D200C S20D30C – S20D200C S30D30C – S30D200C S40D30C – S40D200C S60D30C – S60D200C S80D30C – S80D200C

Contextual Info: S30D30C – S30D100C 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

S30D40

Abstract: S30D40P s30d40pt S30D45P S30D60P
Contextual Info: S30D30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S30D60PT CURRENT 30 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

Contextual Info: S30D / A30D, S301 / A301 Vishay Thin Film Dual Value Chip Resistor Isolated FEATURES • 30 Mil Square Size • Resistance Range: 270 to 500K ohms each resistor (Silicon Substrate) 270 to 26K ohms each resistor (Alumina Substrate) • Gold terminations with Tantalum Nitride or Tamelox

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

S30D100

Abstract: S30D70 S30D80 S30D90 S30D8
Contextual Info: MOSPEC S30D70 Thru S30D100 Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: S30D30R Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)

s30d40c

Abstract: S30D45C S30D100C 30D45C S30D60C 30d60c 30D100C S30D45 30D60 30D30
Contextual Info: S30D30C – S30D100C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip H Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

S30D100

Abstract: S30D70 S30D80 S30D90
Contextual Info: EL MOSPEC S30P70 Thru S30D100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky B arrier principle with a M olybdenum barrier metal. These state-of-the-art geom etry features epitaxial construction with oxide passivation and metal overlay contact.

A30D

Abstract: S30I
Contextual Info: S30D / A30D, S301 / A301 Vishay Thin Film Dual Value Chip Resistor Isolated FEATURES • 30 Mil Square Size • Resistance Range: 270 to 500K ohms each resistor (Silicon Substrate) 270 to 26K ohms each resistor (Alumina Substrate) • Gold terminations with Tantalum Nitride or Tamelox

S30D14B0

Abstract: ST110C12C 14350 ST180C12C s30d12b0 S30DG2A0 st110c04 S34DG6A0 S34D16A0 ST200C
Contextual Info: Thyristors International S R e c tifie r Phase Control Type 445-770 Amps RMS Part Number •T AV @ Tc Vr r m Vo rm (V) S30DG2A0 S30DG2B0 S30DG4A0 S30DG4B0 S30DG6A0 S30DG6B0 S30DG8A0 S30DG8BÛ S30D10A0 S30D10B0 S30D12A0 S30D12B0 S30D14A0 S30D14B0 S30D16A0

S30DG4B0

Abstract: ST180C12C ST110C04C ST110 ST200C12C S30DG2A0 S30DG2B0 S30DG4A0 S30DG8A0 S30DG8B0
Contextual Info: INTERNATIONAL RECTIFIER HÔS5452 001G705 EbE D Phase Control Thyristors 445 TO 770 AMPS RMS Part V number V RRM ’•¡• RMS ’t (AV) T C S30DG2A0 S30DG2BQ S30DG4A0 S30DG4B0 S30DG6A& S3QDG6B0 S30DG8A0 S30DG8B0 S30D1OAO S30D10BQ S30D12A0 S30D12B0 S30D14A0

S30D40C

Abstract: S30D60C S30D45C S30D30C S30D35C S30D50C S30D
Contextual Info: S30D30C – S30D60C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current S High Surge Current Capability Plastic Material has UL Flammability

S30D60C

Abstract: S30D30CE S30D60CE
Contextual Info: MOSPEC S30D30CE Thru S30D60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: S30D30D Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: S30D30P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)

Contextual Info: S30D30A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

S30D30

Abstract: S30D60
Contextual Info: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: P R E C I S I O N T H I N F I L M T E C H N O L O G Dual Value Chip Resistor S30D/A30D and S30I/A30I Series Isolated FEATURES • 30 Mil Square Size • Resistance Range: (Silicon Substrate) 270 to 500K ohms each resistor (Alumina Substrate) 270 to 26K ohms each resistor