S2227 Search Results

DS2227

Abstract: DS2227-100 DS2227-120 DS2227-55 DS2227-70 stk power amp OUTPUT-15V
Contextual Info: DALLAS SEMICONDUCTOR CORP 3^E D • 2bl413Q G0034MS ^ ■ DAL S2227 PRELIM INA R Y DALLAS SEMICONDUCTOR S2227 Flexible NV SRAM Stik FEATURES PIN DESCRIPTION • Flexibly organized as 128K x 32, 256K x 16, o r5 1 2 K x 8 b its • Data retention >10 years In

Contextual Info: DALLAS S2227 Flexible NV SRAM Stik s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Flexibly organized as 128K x 32, 256K x 16, or 512K x 8 bits • Data retention >10 years in the absence of Vcc • Nonvolatile circuitry transparent to and independent

S2227

Contextual Info: DALLAS s e m ic o n d u c t o r S2227 Flexible NV SRAM Stik FEATURES PIN ASSIGNMENT • Flexibly organized as 128K x 32, 256K x 16, or 512K x 8 bits • Data retention >10 years in the absence of V cc • Nonvolatile circuitry transparent to and independent

RCA-41024

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
Contextual Info: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )

72-PIN

Abstract: DS1210 DS2227 DS2227-100 DS2227-120 DS2227-70 DS9072-72V
Contextual Info: DS 2227 DALLAS S2227 Flexible NV SRAM Stik s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT • Flexibly organized as 128K x 32, 256K x 16, or 512K x 8 bits o • Data retention >10 years in the absence of V qc • Nonvolatile circuitry transparent to and independent

S2227

Contextual Info: DALLAS s e m ic o n d u c to r S2227 Flexible NV SRAM Stik FEATURES PIN ASSIGNMENT • Flexibly organized as 128K x 32, 256K x 16, or 512K x 8 bits =1 ZD • Data retention >10 years in the absence of Vcc o • Nonvolatile circuitry transparent to and independent