S1314 Search Results

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

C67078-S1314-A3

Contextual Info: BUZ 74 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 74 A 500 V 2.1 A 4Ω TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1314-A2

Contextual Info: BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 74 500 V 2.4 A 3Ω TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 5mm 1Pcs Circuit Board Indicator A93B/SYG/S530-E2/S1314 █ Features : ● Low power consumption ● High efficiency and low cost ● Good control and free combinations on the colors of LED lamps ● Good lock and easy to assembly

C02D

Contextual Info: SIEMENS BUZ 74 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 A Vbs 500 V h 2.1 A ^DSton 40 Package Ordering Code TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current Values b

Q5155

Abstract: ir812
Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Yds BUZ 74 500 V 2.4 A ^bS on 30 Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current h T0 = 30 °C

Contextual Info: SHARP I SPEC No. ISSUE: 1 MFM2-J10307 May. 18. 1998 To; Preliminary S P E C I F I C A T I O N S Product Type 8M x 16 Flash Memory + 1M(x 16) SRAM LR S1314 ( Mcxiel No. LR S1314 ) _ _ ♦This specifications contains 50 pages including the cover and appendix.

C67078-S1314-A3

Contextual Info: BUZ 74 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 74 A 500 V 2.1 A 4Ω TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 74 A SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 A Vbs 500 V 1D 2.1 A flbston 4Ü Package Ordering Code TO-220 AB C67078-S1314-A3 Maximum Ratings Parameter Symbol Continuous drain current Values

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 74 B U Z74 A N channel Enhancement mode Avalanche-rated To Ordering Code Package 11 Type V7ds BUZ 74 500 V 2.4 A 30 "C 3.0 n TO-220 AB C67078-S1314-A2 BUZ 74 A 500 V 2.1 A 27 "C 4.0 ü TO -220 AB C67078-S1314-A3

C67078-S1314-A2

Contextual Info: BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 74 500 V 2.4 A 3Ω TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

SKY73126-31

Abstract: ID31 S1191 S1315 S1317
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

Contextual Info: SQM120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: S1314 PRELIM INARY DALLAS SEMICONDUCTOR S1314 3V Nonvolatile Controller with Lithium Battery Monitor FEATURE PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite-p rote cts SRAM when out of tolerance Vqq is • Autom atically switches to b attery-backup supply

SKY73126-31

Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: SPICE Device Model SUD08P06-155L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si4447ADY www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

C10535E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as