SISA04DN Search Results

Contextual Info: SiSA04DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET

Contextual Info: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET

SiSA04DN

Contextual Info: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET

Contextual Info: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET

S1203

Contextual Info: New Product SiSA04DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.00215 at VGS = 10 V 40g 0.0031 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET

draloric potentiometers cermet 581

Abstract: WISTRON power sequence
Contextual Info: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

PowerPAK 1212-8

Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications

Contextual Info: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Entertainment Set-Top Boxes 4 LCD TVs 5 Games Consoles 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay

Contextual Info: Vishay Intertechnology, Inc. SuPER 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products mkP1848S フィルムコンデンサ 薄型設計のフィルムコンデンサ 2 VCuT05D1-SD0 双方向対称型

Contextual Info: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer コンシューマー エンターテインメント セットトップボックス 4 LCDテレビ 5

POWERPAK SO8

Abstract: SIS32
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V

Contextual Info: Vishay Intertechnology, Inc. Super 12 Featured Products S12 2012 www.vishay.com/ref/2012S12 AND TEC O L OGY INNOVAT I N HN O 19 62-2012 Super 12 Featured Products MKP1848S Film Capacitor Film capacitors with slim design. 2 VCUT05D1-SD0 BiSy Single-Line ESD

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in