S12VS Search Results

FR4 dielectric constant at 2.4 Ghz

Abstract: SHF-0189 S12VS
Contextual Info: Microstrip Segment Specifications Preliminary Preliminary SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET 900 MHz Application Circuit at 25° C Vds=8V, Idq=100mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value Cd1,8 18 pF RO HM MCH18 series

FR4 dielectric constant 4.6

Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

SHF-0589

Abstract: MCH18
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

rf 4*4 mm QFN

Abstract: APS3628RS34P
Contextual Info: Not recommended for new designs APS3628 Eight-way Active Power Splitter PRELIMINARY DATA SHEET- Rev 1.2 FEATURES • Single Input, Eight Output Design • Wideband Operation to above 1 GHz • Nominal 4.2 dB Gain • 4 dB Typical Noise Figure • Single +3.3 V Supply

MGF4918D

Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

Stanford SHF-0289

Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
Contextual Info: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

tpc8130

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 3 0 T A , u P C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ,uPC8130TA and ,uPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

mmic SOT-89 h1

Abstract: FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 SHF-0189 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs
Contextual Info: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

SHF 205

Abstract: SOT-89 LM1 SHF-0189 Scattering parameter
Contextual Info: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

SHF-0289

Abstract: SHF 189 FR4 dielectric constant vs temperature
Contextual Info: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

FR4 dielectric constant 4.6

Abstract: FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 SHF-0189 H1 SOT-89 826 5v sot-89 S12VS
Contextual Info: Product Description Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

Contextual Info: De | aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is

CAPACITOR SM

Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact
Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

Contextual Info: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices’ SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as

MGF4418D

Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic