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    S12310 Price and Stock

    Anytek Technology Corporation Ltd TS12310A0000G

    TERM BLOCK PLUG 12POS 3.81MM
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    DigiKey TS12310A0000G Bulk 3,060
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    • 10000 $1.37825
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    RS TS12310A0000G Bulk 3,060
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    • 10000 $1.75
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    TME TS12310A0000G 3,060
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    • 10000 $1.69
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    Interstate Connecting Components TS12310A0000G
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    Anytek Technology Corporation Ltd TS12310C0000G

    TERM BLOCK PLUG 12POS 3.81MM
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    DigiKey TS12310C0000G Bulk 3,000
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    RS TS12310C0000G Bulk 3,000
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    TME TS12310C0000G 3,000
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    Interstate Connecting Components TS12310C0000G
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    Anytek Technology Corporation Ltd TS12310D0000G

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    DigiKey TS12310D0000G Bulk 3,000
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    • 10000 $1.69006
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    TME TS12310D0000G 3,000
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    • 10000 $2.08
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    Interstate Connecting Components TS12310D0000G
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    Anytek Technology Corporation Ltd TS12310B0000G

    TERM BLOCK PLUG 12POS 3.81MM
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    DigiKey TS12310B0000G Bulk 3,040
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    • 10000 $1.37843
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    TME TS12310B0000G 3,040
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    • 10000 $1.69
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    Interstate Connecting Components TS12310B0000G
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    Vishay Intertechnologies RS1/2310R0DB12

    Res Wirewound 310 Ohm 0.5% 3/4W ?20ppm/?C Ceramic Hi Temp Sil AXL Thru-Hole Bulk - Bulk (Alt: RS1/2310R0DB12)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RS1/2310R0DB12 Bulk 14 Weeks 100
    • 1 -
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    • 100 $7.06215
    • 1000 $3.3125
    • 10000 $3.3125
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    Mouser Electronics RS1/2310R0DB12
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    • 1000 $9.59
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    Find more S12310 price and stock on Findchips.com

    S12310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIHW30N60E-GE3

    Abstract: No abstract text available
    Text: SiHW30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHW30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHW30N60E-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		SiHP30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    4810 mosfet

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced Switching and Conduction Losses


    Original     		SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 4810 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS


    Original     		SiHG30N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SDS Relais rh-c-12v

    Abstract: EUD61M rac 16a 400v
    Text: 1949–2015 YEARS OF INNOVATION Switchgear, power supply units and electronic energy meters for installation in buildings and use in control technology Products and prices 2015 Switching on the future Pictograms The performance of our switchgear has become so complex that we have devised pictograms to depict


    Original     		D-70736 I-64025 CH-8954 E-08398 SDS Relais rh-c-12v EUD61M rac 16a 400v PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHG24N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHP24N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHW47N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHB30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHB30N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D APPLICATIONS


    Original     		SiHP30N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHG24N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHP24N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF