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    S1214 Search Results

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    S1214 Price and Stock

    CIT Relay & Switch CS1214JF260

    SWITCH TACTILE SPST-NO 0.05A 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS1214JF260 Reel 4,000 4,000
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    • 10000 $0.19904
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    CIT Relay & Switch CS1214JF160

    SWITCH TACTILE SPST-NO 0.05A 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS1214JF160 Reel 4,000 4,000
    • 1 -
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    • 1000 -
    • 10000 $0.19904
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    CIT Relay & Switch CS1214GF160

    SWITCH TACTILE SPST-NO 0.05A 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS1214GF160 Reel 4,000 4,000
    • 1 -
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    • 10000 $0.19904
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    CIT Relay & Switch CS1214AJF160

    SWITCH TACTILE SPST-NO 0.05A 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CS1214AJF160 Reel 4,000 4,000
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    ABLIC Inc. S-1214B50H-V5T2U7

    IC REG LINEAR 5V 1A TO252-5S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () S-1214B50H-V5T2U7 Cut Tape 1,773 1
    • 1 $3.15
    • 10 $2.004
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    S-1214B50H-V5T2U7 Digi-Reel 1,773 1
    • 1 $3.15
    • 10 $2.004
    • 100 $1.365
    • 1000 $1.01
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    Mouser Electronics S-1214B50H-V5T2U7 1,513
    • 1 $3.14
    • 10 $2.01
    • 100 $1.37
    • 1000 $1.01
    • 10000 $0.933
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    Verical S-1214B50H-V5T2U7 2 2
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    Onlinecomponents.com S-1214B50H-V5T2U7
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    • 1000 $2.54
    • 10000 $0.927
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    S1214 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S12140
    Syntron Silicon Rectifier Data Book 1971 Scan PDF

    S1214 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SIHS36N50D

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: DATA SHEET SKY73033: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description • 2G/3G base station transceivers: − GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033 is a fully integrated single mixer that includes


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    SKY73033: SKY73033 200635C PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    200635D

    Abstract: SKY73033-11 s937 S938 SKY73033 S944
    Contextual Info: DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description x 2G/3G base station transceivers:  GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033-11 is a fully integrated single mixer that includes


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    SKY73033-11: SKY73033-11 200635D 200635D s937 S938 SKY73033 S944 PDF

    Si4190ADY

    Abstract: si41
    Contextual Info: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41 PDF

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    nc 1458

    Abstract: MA 1458 SIHG32N50D-GE3
    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHG32N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 nc 1458 MA 1458 SIHG32N50D-GE3 PDF

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    mosfet 452

    Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet 452 PDF

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


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    HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A PDF

    Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


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    IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) PDF

    nc 1458 p1

    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    SiHG32N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 nc 1458 p1 PDF

    ADS1215

    Abstract: S1214
    Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N S E S1214 ADS1215 1 P A T E N T S PEN D IN G www.burr-brown.com/databook/S1214.html 22-Bit ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • D ELTA-SIGM A A/D CO N V ERT ER


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    ADS1214 ADS1215 com/databook/ADS1214 22-Bit 1000Hz 320mV ADS1215 S1214 24-bit PDF

    SIHFR214TR

    Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original
    IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) SIHFR214TR PDF

    Contextual Info: DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description x 2G/3G base station transceivers:  GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033-11 is a fully integrated single mixer that includes


    Original
    SKY73033-11: SKY73033-11 200635D PDF

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHS36N50D Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    SiHG32N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF