S1214 Search Results
S1214 Price and Stock
CIT Relay & Switch CS1214JF260SWITCH TACTILE SPST-NO 0.05A 50V |
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CS1214JF260 | Reel | 4,000 | 4,000 |
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CIT Relay & Switch CS1214JF160SWITCH TACTILE SPST-NO 0.05A 50V |
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CS1214JF160 | Reel | 4,000 | 4,000 |
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CIT Relay & Switch CS1214GF160SWITCH TACTILE SPST-NO 0.05A 50V |
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CS1214GF160 | Reel | 4,000 | 4,000 |
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CIT Relay & Switch CS1214AJF160SWITCH TACTILE SPST-NO 0.05A 50V |
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CS1214AJF160 | Reel | 4,000 | 4,000 |
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ABLIC Inc. S-1214B50H-V5T2U7IC REG LINEAR 5V 1A TO252-5S |
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S-1214B50H-V5T2U7 | Cut Tape | 1,773 | 1 |
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S-1214B50H-V5T2U7 | 1,513 |
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S-1214B50H-V5T2U7 | 2 | 2 |
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S-1214B50H-V5T2U7 |
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S1214 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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S12140 | Syntron | Silicon Rectifier Data Book 1971 | Scan |
S1214 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SIHS36N50DContextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: DATA SHEET SKY73033: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description • 2G/3G base station transceivers: − GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033 is a fully integrated single mixer that includes |
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SKY73033: SKY73033 200635C | |
AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
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OCR Scan |
Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 | |
200635D
Abstract: SKY73033-11 s937 S938 SKY73033 S944
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SKY73033-11: SKY73033-11 200635D 200635D s937 S938 SKY73033 S944 | |
Si4190ADY
Abstract: si41
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Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41 | |
Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
nc 1458
Abstract: MA 1458 SIHG32N50D-GE3
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SiHG32N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 nc 1458 MA 1458 SIHG32N50D-GE3 | |
Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
mosfet 452Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 mosfet 452 | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A | |
Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) |
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IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) | |
nc 1458 p1Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHG32N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 nc 1458 p1 | |
ADS1215
Abstract: S1214
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OCR Scan |
ADS1214 ADS1215 com/databook/ADS1214 22-Bit 1000Hz 320mV ADS1215 S1214 24-bit | |
SIHFR214TRContextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) |
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IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) SIHFR214TR | |
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Contextual Info: DATA SHEET SKY73033-11: 1700 – 2200 MHz High Gain and Linearity Single Downconversion Mixer for 2G/3G Base Station Applications Applications Description x 2G/3G base station transceivers: GSM/EDGE, CDMA, UMTS/WCDMA The SKY73033-11 is a fully integrated single mixer that includes |
Original |
SKY73033-11: SKY73033-11 200635D | |
Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHS36N50D Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
SiHG32N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |