S11S22 Search Results

SOT 23 AJW

Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

TM6661

Abstract: BX6661
Contextual Info: RF AMPLIFIER MODEL TM6661 Available as: Features Typical Intermodulation Performance at 25 ºC ! High Output Power: +27 dBm Typical ! GaAs FET Design ! Environmental Screening Available Second Order Harmonic Intercept Point . +54 dBm Typ. Second Order Two Tone Intercept Point . +48 dBm (Typ.)

s-parameter

Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio
Contextual Info: DesignCon 2006 Accurate Calibration and Measurement of Non-Insertable Fixtures in FPGA and ASIC Device Characterization Hong Shi, Altera Corporation [hshi@altera.com] Geping Liu, Altera Corporation Alan Liu, Altera Corporation CP-ACMFIX-1.0 Abstract S-parameter measurement on interfaces with non-insertable connections has been a

telemecanique XCS-E

Abstract: Telemecanique XPS Preventa xps-ac XPSAT5110 XPSAF5130 xpsav11113 XPS-AT3410 telemecanique xps-ak XPS-AC XPSAC5121P
Contextual Info: Machine Safeguarding Products PREVENTA XPS Safety Relays Supplement Catalog 03 File 9007 CONTENTS Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10 General Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11-12

AT-41532

Abstract: TRANSISTOR TT 2190 transistor ajw
Contextual Info: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered

Contextual Info: General Purpose, Low Current NPN␣ Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900␣ MHz, 1.8␣ GHz, and 2.4␣ GHz • Performance 5␣ V, 5␣ mA

s-parameter s11 s12 s21 S22 2.5 TO 3MHz

Abstract: SWR NOMOGRAPH S11S22-S12S21 T11T22-T12T21 T11-T22
Contextual Info: RoHS Compliant COAXIAL CONNECTORS 2008 CAT.NO.COAX-007A-E.FEB.2008 COAXIAL CONNECTORS Appendices 1. Unit conversion（122 to 123 Page） ①VSWR conversion ②dBm-W conversion 2. Glossary（124 to 126 Page） 3. Frequency designations（127 Page） 4. Calculation of the VSWR of connectors in cascade connection（128 to 130 Page）

AT-32032

Abstract: AT-41532 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70
Contextual Info: Agilent AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use

Contextual Info: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & A S SO C IA T E D GAIN v s. FR EQ U EN C Y Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 G Hz HIGH ASSOCIATED GAIN m G a = 9.5 dB T Y P at f = 12 G Hz Lg = 0.3 |_im, Wg = 280 |_im

circle surround 2 IC

Abstract: Using Linvill Techniques LS12 MAX2320 MAX2720 MAX2721 SS11 app abstract
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1851 Low-Noise Amplifier Stability Concept to Practical Considerations,

matching with smith chart

Abstract: AN-1852 chart AN1852 APP1852 MAX2320 MAX2720 MAX2721 lna 30MHz to 2214
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1852 Low-Noise Amplifier Stability Concept to Practical Considerations,

NE67383

Contextual Info: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz

TRANSISTOR K 2191

Abstract: nec 2761
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

combiner THEORY

Abstract: latitude 5962 sa620 datasheet stub tuner matching HP 346B SA621 PHILIPS tuner schematic Dielectric Resonator Oscillator DRO filter 900MHz noise figure IC Ensemble
Contextual Info: INTEGRATED CIRCUITS AN2000 Techniques for optimizing UHF front-end integrated circuits Randall Yogi Philips Semiconductors 1997 Nov 19 Philips Semiconductors Application note Techniques for optimizing UHF front-end integrated circuits AN2000 Author: Randall Yogi

infineon marking W1s

Abstract: INFINEON PART MARKING SOT363 T0509 BGA430 GPS05604 VPS05604
Contextual Info: Pre li mi na ry d at a she et , BG A4 30 , Ap ri l 20 01 y BGA430 li m in ar B r oa d B a nd H i gh G ai n L NA P re MMIC W ir el e s s S il i c o n Di s c r e te s N e v e r s t o p t h i n k i n g . Edition 2001-04-24 Published by Infineon Technologies AG,

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry

Contextual Info: 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER upC2745T NOISE FIGURE AND GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 7.5 mA FEATURES_ • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL 1.8 MIN • LOW POWER CONSUMPTION: 22.5 mW TYP

Safety Module

Abstract: Light Curtains Safety Modules 98/37/EC
Contextual Info: Safety Modules Light curtains Types NLG02D, NLG13D Screw, fixed Screw, detachable • Safety Category 4, Performance Level e, according to EN 13849-1 • Safety Category 4 according to EN 954-1 • 2 x 6 A NO safety outputs NLG02D • 3 x 6 A NO safety outputs and 1 x 6 A NC auxiliary

Contextual Info: RF AMPLIFIER MODEL TM6661 Available as: TM6661, 4 Pin TO-8 T4 TN6661, 4 Pin Surface Mount (SM3) FP6661, 4 Pin Flatpack (FP4) BX6661, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C n High Output Power: +27.5 dBm Typical

SRB324STV

Abstract: en iso 13850 324ST SRB324ST DC-13 S11-S12 ac15 ec BNS 33-02Z-2187
Contextual Info: Operating instructions Safety-monitoring module SRB 324ST V.3 1 About this document EN 1.1 Function This operating instructions manual provides all the information you need for the mounting, set-up and commissioning to ensure the safe operation and disassembly of the safety-monitoring module. The operating instructions must be available in a legible condition and a complete version in

AT-32032

Abstract: transistor tt 2146 AT-32032-BLK ppc capacitor
Contextual Info: 低電流高性能NPNシリコン･バイ ポーラ･トランジスタ AT-32032 特 長 ● 低電流、低電圧用高性能トランジス タ 3-Lead SC-70 SOT-323 Surface Mount Plastic Package 概 要 A T - 3 2 0 3 2 は低電圧動作用に最適化さ

4.702.119

Abstract: 41532 AT-32032 AT-41532 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70
Contextual Info: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

2.2 k resistor

Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8␣ GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA

mosfet p321

Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS