S1126 Search Results
S1126 Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PMCS1126A2BQDVGR |
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±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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PMCS1126A1BQDVGR |
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±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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PMCS1126B2BQDVGR |
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±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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PMCS1126B1BQDVGR |
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±1300V reinforced isolation, 80ARMS 500kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 |
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S1126 Price and Stock
Texas Instruments TMCS1126BBAQDVGRQ1AEC-Q100 QUALIFIED 80ARMS 500KHZ |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1126BBAQDVGRQ1 | Cut Tape | 2,000 | 1 |
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Texas Instruments TMCS1126B2BQDVGRQ1AEC-Q100 QUALIFIED 80ARMS 500KHZ |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1126B2BQDVGRQ1 | Digi-Reel | 1,996 | 1 |
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Texas Instruments TMCS1126B1BQDVGRQ1AEC-Q100 80ARMS 500KHZ HALL-EFFE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1126B1BQDVGRQ1 | Digi-Reel | 1,966 | 1 |
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Texas Instruments TMCS1126B2AQDVGRQ1AEC-Q100 80ARMS 500KHZ HALL-EFFE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1126B2AQDVGRQ1 | Digi-Reel | 1,965 | 1 |
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TMCS1126B2AQDVGRQ1 | 1,879 |
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Texas Instruments TMCS1126B9AQDVGRQ1AEC-Q100 80ARMS 500KHZ HALL-EFFE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TMCS1126B9AQDVGRQ1 | Cut Tape | 1,908 | 1 |
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S1126 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C102
Abstract: C103 S150 S160 S307 D306 D3072
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PD16640C PD16640C C102 C103 S150 S160 S307 D306 D3072 | |
diode s1 77
Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
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S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128 | |
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 300/309-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The ^¡PD16640C is a source driver for TFT-LCD 64-gray scale displays. Its logic circuit operates at 3.3 V and the driver circuit operates at 3.3 or 5.0 V (selectable). The input data is digital data at 6 bits x 3 dots, and 260,000 colors |
OCR Scan |
300/309-OUTPUT PD16640C 64-gray 64-value oPD1664-OCN-xxx 40secs IZAC1003 11269EJ1V0DS00 | |
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT H PD16640C 300/309-OUTPUT TFT-LCD SOURCE DRIVER 64 GRAY SCALE DESCRIPTION The /j, PD16640C is a source driver for TFT-LCD 64-gray scale displays. Its logic circuit operates at 3.3 V and the |
OCR Scan |
PD16640C 300/309-OUTPUT PD16640C 64-gray 64-value PD16640CN-XXX 40secs IZAC1003 S11269EJ1V1DSOO | |
socket s1
Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
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S1-90 S1-82 S1-79 S1-77 TTL10 TTL12 TTL14 TTL18 TTL44 SGND/D15 socket s1 diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18 | |
Contextual Info: Mobile data carrier TW-R20-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
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TW-R20-B128-Ex 2013-07-12T17 D-45472 | |
Contextual Info: Mobile data carrier TW-L80-50-P-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
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TW-L80-50-P-B128 ope47/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
Contextual Info: Mobile data carrier TW-R30-M-B128 • ■ 3 different mounting options in/on metal, incl. accessories EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
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TW-R30-M-B128 D-45472 MF-R30 TWR30-M-B128 2013-07-12T17 | |
Contextual Info: Mobile data carrier TW-L49-46-F-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write |
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TW-L49-46-F-B128 ope47/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A | |
d312 6 pin
Abstract: C102 C103 S150 S160 S307
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PD16640C 300/309-OUTPUT PD16640C 64-gray 64-value d312 6 pin C102 C103 S150 S160 S307 | |
C102
Abstract: C103 S150 S160 S307
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Original |
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Contextual Info: Mobile data carrier TW-R16-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R16-B128-Ex 2013-07-12T17 D-45472 | |
Contextual Info: Mobile data carrier TW-R50-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
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TW-R50-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
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BVS 09 ATEXContextual Info: Mobile data carrier TW-R30-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R30-B128-Ex 2013-07-12T17 D-45472 BVS 09 ATEX | |
T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
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OCR Scan |
10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d | |
TN-M18-H1147/S1126Contextual Info: Mobile data carrier TW-R16-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R16-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 TN-M18-H1147/S1126 | |
Contextual Info: Mobile data carrier TW-R30-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R30-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
Contextual Info: Mobile data carrier TW-R20-B128 • EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, depending on the combination of read/write head and data carrier. |
Original |
TW-R20-B128 T0-H1147/S1126 TN-S32XL-H1147 2013-07-12T17 D-45472 | |
75C48
Abstract: IDT75C48 o1111111
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OCR Scan |
4A25771 500mW 28-pin IL-STD-883, 75C48 IDT75C48 S11-32 MA2S771 000M5 75C48 o1111111 | |
Contextual Info: Mobile data carrier TW-R50-B128-Ex • ATEX category II 2 G, Ex-zone 1 ■ ATEX category II 2 D, Ex-zone 21 ■ EEPROM, memory 128 byte Functional principle The HF read/write heads operating at a frequency of 13.56 MHz, form a transmission zone the size of which 0…500 mm varies, |
Original |
TW-R50-B128-Ex 2013-07-12T17 D-45472 | |
VDD-250
Abstract: C102 C103 S150 S160 S307 VDD250 S1126
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PD16640C PD16640C PD16640CN-xxx S11269JJ1V1DS00 103-bit VDD-250 C102 C103 S150 S160 S307 VDD250 S1126 |