S1102 Search Results

Contextual Info: Signal processor for inductive sensors up to 250°C EM30-AP6X2-H1141/S1102 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4571 ■ For temperatures up to +70°C ■ To be used only with Ni25-CQ40…and Ni40-CQ80… ■ DC 3-wire, 10…30 VDC ■ NO contact, PNP output

Contextual Info: Inductive sensor with extended temperature range NI40-CQ80/S1102 5M • Rectangular, height 41 mm ■ Aluminium sensor housing ■ Plastic, PEEK ■ Aluminium cable sheath ■ For temperatures up to +250°C ■ ■ ■ To be used only with EM30-AP6X2-H1141/S1102 processing

Contextual Info: Inductive sensor with extended temperature range NI25-CQ40-L1131/S1102 • Rectangular, height 40 mm ■ Aluminium sensor housing ■ Plastic, PEEK ■ For temperatures up to +250°C ■ ■ ■ To be used only with EM30-AP6X2-H1141/S1102 processing unit and with the HTC1102 *M high-temperature connection cable

Contextual Info: Inductive sensor with extended temperature range NI25-CQP40/S1102 5M • ■ Aluminium sensor housing ■ Plastic, PEEK ■ Aluminium cable sheath ■ For temperatures up to +250°C ■ ■ NI25-CQP40/S1102 5M 1602409 Rated operating distance Sn Mounting condition

EE-SX1102

Abstract: EE-SX1101 sx1101 EE-SX4101 EE-S1102
Contextual Info: omRon EE-SX1101, EE-SX1102, EE-SX4101 Ultra Compact Photomicrosensors with 5.2-mm Height and 2.0-mm Width Slot • Models EE-SX1101 and EE-S1102 have photo­ transistor output. ■ Model EE-SX4101 has Light-ON photo IC output. ■ Model EE-SX1102 has leads configured for surface

Contextual Info: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24

Contextual Info: High temperature connection cable for inductive sensor up to 250 °C HTC1102 10M • 10 m FEP cable, shielded, 3 x 0.34 mm ■ Al cable sleeve, Ø 8 mm ■ For temperatures up to +250 °C ■ ■ 2 Operation with signal processor EM30-AP6X2-H1141/S1102 Connection to inductive sensors up to

diode Marking code v3

Contextual Info: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption

Contextual Info: MPPC multi-pixel photon counter S11028 series Thermoelectrically cooled MPPC for photon counting Active area: 1 x 1 mm The S11028 series is a photon counting detector that integrates a 1×1 mm MPPC with a thermoelectrically cooler. It also contains a thermistor for temperature monitoring, allowing stable measurement over long periods of time. A temperature controller

BSM 204-A

Contextual Info: BSM 204 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 204 A 50 V 200 A 0.0045 Ω HB MOS 1 C67076-S1102-A20

C11040

Contextual Info: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21

marking code vishay SILICONIX

Abstract: SIA915DJ
Contextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

N-Channel mosfet sot-363

Contextual Info: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

SIA915DJ

Contextual Info: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

countersunk screw for pcb

Abstract: S3215
Contextual Info: NEXT FIND IT Slanted enclosures are available in six styles with either rounded or square corners. Materials Base and cover ABS [Acrylonitrile Butadiene Styrene] ABS Polycarbonate (PC) Aluminum (AL) Panels Anodized Aluminum (AA) Please see each ordering page for

sir662dp

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •

Contextual Info: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses

Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion

Contextual Info: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQ7002K Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 1.30 RDS(on) () at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single D TO-236 SOT-23 G • Halogen-free According to IEC 61249-2-21

sil1364

Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
Contextual Info: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan