SI7392ADP Search Results
SI7392ADP Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
SI7392ADP | Vishay Siliconix | N-Channel Reduced Qg, Fast Switching WFET | Original | |||
SI7392ADP-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A PPAK 8SOIC | Original | |||
SI7392ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A PPAK 8SOIC | Original |
SI7392ADP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Si7392ADPContextual Info: SPICE Device Model Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si7392ADP S-61151Rev. 26-Jun-06 | |
Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion |
Original |
Si7392ADP 2002/95/EC Si7392ADP-T1-E3 Si7392ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • High-Side DC/DC Conversion |
Original |
Si7392ADP Si7392ADP-T1-E3 Si7392ADP-T1-GE3 08-Apr-05 | |
S-61961
Abstract: Si7392ADP Si7392ADP-T1-E3 A2538
|
Original |
Si7392ADP Si7392ADP-T1-E3 S-61961 09-Oct-06 A2538 | |
Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion |
Original |
Si7392ADP 2002/95/EC Si7392ADP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7392ADPContextual Info: SPICE Device Model Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
Si7392ADP 18-Jul-08 | |
Contextual Info: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses |
Original |
Si7392ADP Si7392ADP-T1-E3 08-Apr-05 | |
Contextual Info: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion |
Original |
Si7392ADP 2002/95/EC Si7392ADP-T1-E3 Si7392ADP-T1-GE3 11-Mar-11 | |
Si7392ADP
Abstract: Si7392ADP-T1-E3
|
Original |
Si7392ADP Si7392ADP-T1-E3 Si7392ADP-T1-GE3 18-Jul-08 | |
Contextual Info: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses |
Original |
Si7392ADP Si7392ADP-T1-E3 08-Apr-05 | |
SI7392ADPContextual Info: Si7392ADP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V ID rDS(on) (W) 30 (A)a 0.0075 @ VGS = 10 V 30 0.0115 @ VGS = 4.5 V 30 D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET |
Original |
Si7392ADP Si7392ADP-T1 08-Apr-05 | |
Contextual Info: Si7392ADP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V ID rDS(on) (W) 30 (A)a 0.0075 @ VGS = 10 V 30 0.0115 @ VGS = 4.5 V 30 D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET |
Original |
Si7392ADP Si7392ADP-T1 51803--Rev. | |
q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
|
Original |
SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS |