SiR826DP
Abstract: No abstract text available
Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR826DP
2002/95/EC
SiR826DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TDA1200
Abstract: field strength meter schematic diagram of FM radio tda 1200 FM TDA 1028 TDA HI-FI 12v uv meter tda 1200 TL 0621 N AV13
Text: TDA1200 LINEAR INTEGRATED CIRCUIT FM-IF RADIO SYSTEM PRELIMINARY DATA • H IG H L IM IT IN G S E N S IT IV IT Y • H IG H AM R • H IG H R EC O VERED A U D IO • G O O D C A P TU R E RATIO • LOW D IS T O R T IO N • M U TIN G C A P A B ILIT Y The TDA 1200 is a silicon monolithic integrated circuit in a 1 6 -le a d dual in -lin e plastic
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TDA1200
TDA1200
S-1027/1
CS-0024
field strength meter
schematic diagram of FM radio
tda 1200 FM
TDA 1028
TDA HI-FI 12v
uv meter
tda 1200
TL 0621 N
AV13
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SI1315DL
Abstract: lj marking
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
lj marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Category 6 Cable for High-Power PoE Applications Future-proof your installations with the GenSPEED EfficienC Max Category 6 cable. Exceeds Proposed PoE+ IEEE 802.3bt Standards The EfficienC Max Category 6 cable goes beyond the proposed IEEE 802.3bt standard of 49 W
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TSB-184
350MHz
568-C
DAT-0164-0215
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SI 1340
Abstract: si-1340 h
Text: Dense-Pac Microsystems, Inc. S1027 ^ 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1027 is a 64K X 16 high-speed, low-power static RAM module comprised o f sixteen 64K X 1 m onolithic SRAM's, and decoupling capacitors surface mounted on a thick film ceramic substrate.
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DPS1027
DPS1027
30A00603
S1027
30A00
SI 1340
si-1340 h
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Untitled
Abstract: No abstract text available
Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR826DP
2002/95/EC
SiR826DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
11-Mar-11
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PDF
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M74HC133
Abstract: No abstract text available
Text: M54HC133 M74HC133 SGS-THOMSON * 5 7 ILO 13 INPUT NAND GATE HIGH SPEED tpD = 13 ns TYP. at Vcc = 5 V LOW POWER DISSIPATION Ice = 1 HA (MAX.) at Ta = 25* C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OutpuT IMPEDANCE
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M54HC133
M74HC133
54/74LS133
M54HC133F1
74HC133M
74HC133B1R
74HC133C1R
M54/74HC133
13-INÂ
S-10275
M74HC133
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PDF
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Untitled
Abstract: No abstract text available
Text: / f f lD ii9 ' S1027 ' • U - U K ^ l v l Dense-Pac Microsystems, fgç^_ 64KX 16 CM OS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The S1027 is a 64K X 16 high-speed, low-power static RAM module comprised of sixteen 64K X 1
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DPS1027
DPS1027
S1027
-f-125
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PDF
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20PIN
Abstract: UPD6211
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C3L0
Abstract: No abstract text available
Text: MODERATE BAND AFS AMPLIFIERS r MODEL NUMBER FREQUENCE RANGE iGHz GAIN dB Mm ) GAIN FLATNESS (dB M ax.) NOISE FIGURE (dB. Max.) VSWR INPUT (M ax.] VSWR OUTPUT POW ER NOM. DC AFS ^ OUTPUT 1 dB COMP POW ER OUTLINE (M ax.] (dBm . Min I 415 V. m A i DRAW ING
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1-08240027-08-10P-4
AFS2-0O24DOÂ
AFS34SO240Q27-G8-10P-4
0Q2400Â
-00500060-08-15P-4
AFS2-00500060-05-1
AFS3-00500060-05-1
AFS4-00500060-05-1
C3L0
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transistor c3150
Abstract: c3271 KEMA KEUR thermostat C4108
Text: What’s New? E X PA N D E D C O M P E T I T I V E O F F E R I N G S Cross-Reference & Online Spec Sheets We have expanded our Carol Brand Electronics offering and now have more competitive crosses than anyone. Many of these cables are in stock and ready for
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E3842S
E3843S
EO24C0045510
EO26C0045510
EO28C0045510
EO28P0181510
EO28P0501510
EO30C0045510
SP00C0011010
SP00C0012010
transistor c3150
c3271
KEMA KEUR thermostat
C4108
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7133806
Abstract: No abstract text available
Text: GenSPEED 6 with 17 FREE Category 6 Cable Features And Benefits • Halogen-free ■ Reduced toxicity ■ More environmentally friendly ■ Increased flexibility for easy installation ■ Unique tape design engineered for consistent electrical performance
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DAT-0146-0310
7133806
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Untitled
Abstract: No abstract text available
Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4447ADY
2002/95/EC
Si4447ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4447ADY
2002/95/EC
Si4447ADY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1315DL Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) -8 RDS(on) ()
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Si1315DL
2002/95/EC
OT-323
SC-70
Si1315DL-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4447ADY
2002/95/EC
Si4447ADY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si5997DU
2002/95/EC
Si5997trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: GenSPEED 6 Category 6 Outside Plant Cable Features And Benefits • Innovative cross-web design allowing for maximum pair separation, increasing key electrical performance parameters ■ Gel-filled construction to prevent moisture migration in underground and
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568-C
lbs/1000
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UPD6221GS
Abstract: UPD6221CX 20PIN uPD6221 upd6211cx PD6221GS
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD6221 I2C-BUS COMPATIBLE OCTAL 8BIT D/A CONVERTER DESCRIPTION The µPD6221 is an 8-bit monolithic CMOS digital-to-analog converter using the R-2R technique. The µPD6221 incorporates an 8-channel digital-to-analog converters and I2C-bus compatible interface. The designer needs only
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PD6221
PD6221
64-channels)
UPD6221GS
UPD6221CX
20PIN
uPD6221
upd6211cx
PD6221GS
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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PDF
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Untitled
Abstract: No abstract text available
Text: S1027 Dense-Pac Microsystems. Inc. ^ 64K X 16 C M O S S R A M M O D U L E NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N: The D P S1 0 2 7 is a 64K X 16 high-speed, low-power static R A M module comprised of sixteen 64K X 1 monolithic S R A M 's, and decoupling capacitors
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DPS1027
-t-125â
30A00603
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PDF
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Legrand 037 61
Abstract: No abstract text available
Text: Datacom Cable FOR VOICE AN D DATA CO M M U N I CATI O N S DATACOM This catalog contains in-depth information on the most comprehensive line of copper Datacom products available today for voice and data communications. In a rapidly changing industry with ever-growing demands,
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DAT-0020-R0114
Legrand 037 61
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4PR24
Abstract: GCR1440
Text: Cable Solutions FOR THE INDUSTRIAL AUTOMATION MARKET • Industrial Ethernet • Industrial Communication Protocols • Instrumentation and Control • Portable Power and Cord • Variable Frequency Drive Industrial Automation SERVING THE NEEDS OF THE INDUSTRIAL AUTOMATION MARKET
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COR-0081-0115
4PR24
GCR1440
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