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    S10104 Search Results

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    S10104 Price and Stock

    Hammond Manufacturing CS10104

    BOX STEEL GRAY 10"L X 10"W
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    DigiKey CS10104 Bulk 156 1
    • 1 $21
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    Mouser Electronics CS10104 3
    • 1 $19.93
    • 10 $18.45
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    Newark CS10104 Bulk 2,058 1
    • 1 $20.68
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    RS CS10104 Bulk 1
    • 1 $23.06
    • 10 $19.6
    • 100 $19.6
    • 1000 $19.6
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    Powell Electronics CS10104 668 1
    • 1 $23.65
    • 10 $21.96
    • 100 $20.22
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    Master Electronics CS10104
    • 1 $27.06
    • 10 $24.06
    • 100 $21.34
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    Rochester Electronics LLC DS1010-400

    DS1010 10-TAP SILICON DELAY LINE
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    DigiKey DS1010-400 Tube 70
    • 1 -
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    • 100 $4.34
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    Pentair Equipment Protection - Hoffman S101046G050

    AC 400 460V 50 60HZ 1000W
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    DigiKey S101046G050 Bulk 1
    • 1 $4507.77
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    Onlinecomponents.com S101046G050
    • 1 $5104.39
    • 10 $4834.45
    • 100 $4834.45
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    Pentair Equipment Protection - Hoffman S101046G060

    AC 400 460V 50 60HZ 1000W COMM
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    DigiKey S101046G060 Bulk 1
    • 1 $4835.78
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    Onlinecomponents.com S101046G060
    • 1 $5494.52
    • 10 $5203.95
    • 100 $5203.95
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    Omega Engineering FGS101-040LSE

    HEATER TAPE, HIGH TEMPERATURE, 4
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    DigiKey FGS101-040LSE Bulk 1
    • 1 $119.49
    • 10 $119.49
    • 100 $119.49
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    Avnet Americas FGS101-040LSE Bulk 9 Weeks 1
    • 1 $75.1507
    • 10 $75.1507
    • 100 $75.1507
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    Newark FGS101-040LSE Bulk 1
    • 1 $75.15
    • 10 $75.15
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    S10104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6189B

    Abstract: CB4075
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP40N10-30-GE3 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 6189B CB4075

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si4666

    Abstract: No abstract text available
    Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4666DY 2002/95/EC Si4666DY-T1-GE3 18-Jul-08 si4666

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si8800EDB 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4666DY 2002/95/EC Si4666DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S10011

    Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115
    Text: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original
    PDF S10000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S10011 S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP40N10-30-GE3 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4228DY

    Abstract: si4228
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 18-Jul-08 si4228

    Si7120ADN

    Abstract: 72959
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 18-Jul-08 72959

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4228DY 2002/95/EC Si4228DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4204DY 2002/95/EC Si4204DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking D3 TSOP-6

    Abstract: No abstract text available
    Text: New Product Si7120ADN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 9.5 0.031 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7120ADN 2002/95/EC Si7120ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking D3 TSOP-6

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUP40N10-30-GE3

    Abstract: No abstract text available
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SUP40N10-30-GE3 2002/95/EC O-220AB 18-Jul-08 SUP40N10-30-GE3

    Si7858BDP

    Abstract: SI7858BDP-T1-GE3
    Text: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 18-Jul-08

    sis414DN

    Abstract: 1047 diode
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 25lectual 18-Jul-08 1047 diode

    Untitled

    Abstract: No abstract text available
    Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4666DY 2002/95/EC Si4666DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4204DY 2002/95/EC Si4204DY-T1-GE3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si7858BDP 2002/95/EC Si7858BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4204DY 2002/95/EC Si4204DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTER IDT 54/74FCT299 IDT 54/74FCT299A FEATURES: DESCRIPTION: • IDT54/74FCT299 equivalent to FAST speed; The IDT54/74FCT299 and IDT54/74FCT299A are built using advanced CEMOS'” a dual metal CMOS technology. The IDT54/74FCT299 and IDT54/74FCT299A are 8-Input universal


    OCR Scan
    PDF IDT54/74FCT299 IDT54/74FCT299A 54/74FCT299 54/74FCT299A S10-103 IDT54/74FCT299/A