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    S0910 Search Results

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    S0910 Price and Stock

    MEC Switches A/S 1SS09-10.4

    CAP TACTILE ROUND BLACK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS09-10.4 Bag 8,389 1
    • 1 $0.37
    • 10 $0.335
    • 100 $0.3031
    • 1000 $0.27456
    • 10000 $0.25618
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    MEC Switches A/S 2S09-10.0

    EXTENDER SWITCH 10MM HEIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2S09-10.0 Bag 5,838 1
    • 1 $0.79
    • 10 $0.719
    • 100 $0.6514
    • 1000 $0.58998
    • 10000 $0.55046
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    Newark 2S09-10.0 Bulk 1,360 10
    • 1 -
    • 10 $0.52
    • 100 $0.503
    • 1000 $0.492
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    Amphenol Communications Solutions G17S0910110EU

    CONN D-SUB PLUG 9POS SOLDER CUP
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    DigiKey G17S0910110EU Tray 680 1
    • 1 $0.82
    • 10 $0.696
    • 100 $0.5916
    • 1000 $0.50281
    • 10000 $0.47133
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    TME G17S0910110EU 1
    • 1 $0.859
    • 10 $0.546
    • 100 $0.465
    • 1000 $0.4
    • 10000 $0.388
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    Master Electronics G17S0910110EU
    • 1 -
    • 10 -
    • 100 $0.593
    • 1000 $0.402
    • 10000 $0.394
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    MEC Switches A/S 1ZCS0910506

    CAP SWITCH BLACK ENTER
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    DigiKey 1ZCS0910506 Bag 440 1
    • 1 $3.16
    • 10 $2.863
    • 100 $2.5926
    • 1000 $2.34775
    • 10000 $2.34775
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    Pi Supply PIS-0910

    RASPBERRY PI COMPATIBLE SNES CON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PIS-0910 Bulk 75 1
    • 1 $8.64
    • 10 $8.64
    • 100 $8.64
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    S0910 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    transistor 1047

    Abstract: SC70-5L SiP21106 SiP21107 SiP21108 TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR
    Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


    Original     		SiP21106 SiP21107 SiP21108 150-mA 11-Mar-11 transistor 1047 SC70-5L TSC75-6L TSOT23-5L SIP21106DR-12-E3 SIP21107DR-12-E3 SIP21106DR PDF

    Contextual Info: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS402DN 2002/95/EC SiS402DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR416DP 2002/95/EC SiR416DP-T1-GE3 11-Mar-11 PDF

    35-AG

    Contextual Info: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS402DN 2002/95/EC SiS402DN-T1-GE3 11-Mar-11 35-AG PDF

    Contextual Info: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ400DP 2002/95/EC SiJ400DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SQM110N08-05

    Contextual Info: SQM110N08-05 Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		SQM110N08-05 AEC-Q101 2002/95/EC O-263 SQM110N08-05-GE3 18-Jul-08 SQM110N08-05 PDF

    Contextual Info: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si8461DB 2002/95/EC Si8461DB-T2-E1 18-Jul-08 PDF

    1093 SO-8

    Abstract: SIR428DP-T1-GE3 SO8 1093 SiR428DP
    Contextual Info: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR428DP 2002/95/EC SIR428DP-T1-GE3 18-Jul-08 1093 SO-8 SIR428DP-T1-GE3 SO8 1093 PDF

    SIR416DP-T1-GE3

    Abstract: SiR416DP
    Contextual Info: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR416DP 2002/95/EC SiR416DP-T1-GE3 18-Jul-08 PDF

    Contextual Info: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR416DP 2002/95/EC SiR416DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si5471DC 2002/95/EC Si5471DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR416DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0038 at VGS = 10 V 50 0.0042 at VGS = 4.5 V 50 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR416DP 2002/95/EC SiR416DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    rf transformer sm-22

    Abstract: SM2231 S0910 SM223 ct 440 SM-2231 10320 10440
    Contextual Info: ISO 9001 CERTIFIED E-Series RF 3:1 Transformer 10 - 440 MHz Features ETC3-1 SM-22 * 3:1 Impedance Ratio Specifications @ 25°C 10 - 440 MHz Frequency Range Maximum 3 dB 2 dB 1 dB Insertion Loss 10-440 MHz 10-320 MHz 10-100 MHz Schematic Function Primary dot


    Original     		SM-22 S0910 rf transformer sm-22 SM2231 SM223 ct 440 SM-2231 10320 10440 PDF

    Contextual Info: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS402DN 2002/95/EC SiS402DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    schroff power supply

    Contextual Info: PC Series 190.230 Watt AC-DC Converters Converter with single stage AC to DC conversion and PFC No electrical isolation input to output Input voltage range 85 95 .255 V AC LGA • Extremely slim case (4TE), fully enclosed • Single outputs for 72 and 85 V DC loads


    Original     		1901-7D 1902-7D 25Protective S10025 schroff power supply PDF

    Contextual Info: SiP21106, SiP21107, SiP21108 Vishay Siliconix 150-mA Low Noise, Low Dropout Regulator DESCRIPTION FEATURES The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An ultra low ground current and low


    Original     		SiP21106 SiP21107 SiP21108 150-mA 2002/95/EC. 2002/95/EC PDF

    Contextual Info: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		SUP60N10-18P 2002/95/EC O-220AB SUP60N10-18P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		SiJ400DP 2002/95/EC SiJ400DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS434DN 2002/95/EC SiS434DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR406DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 40g 0.0048 at VGS = 4.5 V 40g VDS (V) 25 Qg (Typ.) 15.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR406DP 2002/95/EC SiR406DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		SUP60N10-18P 2002/95/EC O-220AB SUP60N10-18P-E3 11-Mar-11 PDF

    Si3456DDV

    Abstract: a1615
    Contextual Info: SPICE Device Model Si3456DDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si3456DDV 18-Jul-08 a1615 PDF

    Contextual Info: SQM110N04-04 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V - ID (A) • TrenchFET Power MOSFET


    Original     		SQM110N04-04 AEC-Q101 2002/95/EC O-263 SQM110N04-04-GE3 18-Jul-08 PDF