SiR460D
Abstract: SiR460DP siR460
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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SiR460DP
SiR460DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiR460D
siR460
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5A7-7ir
Abstract: 245-7iR
Text: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 V DC Single output of 5.1 to 48 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Model Selection
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144emperature
5A7-7ir
245-7iR
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SIR460DP-T1-GE3
Abstract: No abstract text available
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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PDF
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SiR460DP
SiR460DP-T1-GE3
18-Jul-08
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245-7iR
Abstract: No abstract text available
Text: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input to output isolation Features • • • • RoHS lead-solder-exempt compliant Efficiency up to 96% Low input-output differential voltage
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Untitled
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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SiA913ADJ
SC-70
SC-70-6
SiA913ADJ-T1-GE3
11-Mar-11
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psb 100
Abstract: PSB-483 TO 48 THYRISTOR FAST SWITCHING 245-7iR
Text: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input-to-output isolation Features • • • • RoHS lead solder exemption compliant Efficiency up to 96% Low input-output differential voltage
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SIA913ADJ-T1-GE3
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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SiA913ADJ
SC-70
SC-70-6
SiA913ADJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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64713
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
11-Mar-11
64713
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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SiA913ADJ
SC-70
SC-70-6
18-Jul-08
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SiA950DJ
Abstract: SIA950DJ-T1-GE3 SC-70-6
Text: New Product SiA950DJ Vishay Siliconix Dual N-Channel 190-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 3.8 at VGS = 4.5 V 0.95 190 4.2 at VGS = 2.5 V 0.9 17 at VGS = 1.8 V 0.3 • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT Power MOSFET
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SiA950DJ
SC-70
SC-70-6
18-Jul-08
SIA950DJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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SiA913ADJ
SC-70
SC-70-6
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SC-70-6
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiA913ADJ
SC-70
SC-70-6
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input-to-output isolation Features • • • • RoHS lead solder exemption compliant Efficiency up to 96% Low input-output differential voltage
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Untitled
Abstract: No abstract text available
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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SiR460DP
SiR460DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IGSS
Abstract: SIR460DP-T1-GE3
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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Original
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PDF
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SiR460DP
SiR460DP-T1-GE3
11-Mar-11
IGSS
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Untitled
Abstract: No abstract text available
Text: New Product SiA913ADJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.061 at VGS = - 4.5 V - 4.5a 0.081 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V a - 4.5 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiA913ADJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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5A7-7ir
Abstract: 245-7iR
Text: PSB Series Data Sheet 3 to 8 A Switching Regulators Input voltage up to 144 V DC Single output of 5.1.48 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Selection chart
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Untitled
Abstract: No abstract text available
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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Original
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PDF
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SiR460DP
SiR460DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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Original
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SiR460DP
SiR460DP-T1-GE3
11-Mar-11
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245-7iR
Abstract: 5A7-7ir 243-7iR iec 60068 2 29 psb 100 PSB 153-7iR TO 48 THYRISTOR FAST SWITCHING PSB 5A4-7iR 5A67IR
Text: PSB Series 3.8 A Switching Regulators Input voltage up to 144 V DC Single output of 5.1.48 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Selection chart Output Uo nom Io nom
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S09014
245-7iR
5A7-7ir
243-7iR
iec 60068 2 29
psb 100
PSB 153-7iR
TO 48 THYRISTOR FAST SWITCHING
PSB 5A4-7iR
5A67IR
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64713
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
18-Jul-08
64713
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Untitled
Abstract: No abstract text available
Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET
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Original
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PDF
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SiR460DP
SiR460DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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