S08A Search Results

S08A

Abstract: S08A30 S08A60
Contextual Info: MOSPEC S08A30 thru S08A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: ßk MOSPEC S08A30 Thru S08A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S08A

Abstract: S08A100 S08A70 S08A80 S08A90
Contextual Info: Bk MOSPEC S08A70 Thru S08A100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S08A200

Abstract: schottky
Contextual Info: MOSPEC S08A200 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150℃ junction temperature. Typical application are in

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150 S08A200

schottky

Abstract: S08A S08A30 S08A60
Contextual Info: MOSPEC S08A30 thru S08A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MOSPEC S08A150 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

frm16

Abstract: S08A S08A100 S08A70 S08A80 S08A90
Contextual Info: Ek MOSPEC S08A70 Thru S08A100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

s08A80

Contextual Info: S08A70PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 70 - 100 Volts S08A100PT CURRENT 8 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

S08A30P

Contextual Info: S08A30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S08A60PT CURRENT 8 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 150 S08A150

S08A

Abstract: S08A100 S08A70
Contextual Info: MOSPEC S08A70 thru S08A100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation

Contextual Info: 3 h a * ? December 1992 HS-S08ARH/883S Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection Features • This Circuit Is Processed in Accordance to MIL-STD883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.

MUX88FQ

Abstract: MUX-88
Contextual Info: FMÏ M UX-88 -CHANNEL ANALOG MULTIPLEXER FOR PCM CODECS OVERVOLTAGE PROTECTED) M o i i n l i t ll i t s I FEATURES GENERAL DESCRIPTIO N • Compatible with Standard* for Noise and Crosstalk in Telephony System* • Pin Compatible with DG508, HI-S08A, LF11508

Contextual Info: MOSPEC S08A30 thru S08A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

S08A

Abstract: S08A30 S08A45 S08A50 S08A60
Contextual Info: ßk MOSPEC S08A30 Thru S08A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: MOSPEC Schottky Barrier Power Rectifiers S08A70 thru S08A100

Contextual Info: S08A40J Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)

Contextual Info: S08A40RJ Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition)

S08B

Abstract: 808B 7 S08B
Contextual Info: - • WEST ACE i « i t A* -k 1 Se _ 5C 7T IE S08A, S08B ÌS Ta ' = 25°C fé W. ft ( 7 a = 2 5 'C ) 14 & Se id tfc -fV cc(V ) | 'J ' ! Wi ^ K # | ft 'J 7 h € (i Id -¥• m a £ À ft tS ft fé if | f t ft. m ¥ e k !i > x y n, jt Vcc V 10 ,4 c/. R i. = oo

Contextual Info: MOSPEC S08A200 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in

schottky

Contextual Info: MOSPEC S08A70 thru S08A100 Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency

MC9S08SG16

Abstract: MC9S08SG32 9511ADC WS 218 AEC P5 XM 001 parametric EQ S08ICSV2 acmp7 se110 freescale superflash
Contextual Info: Freescale Semiconductor MC9S08SG32 DataSheet Addendum by: Microcontroller Solutions Group This is the MC9S08SG32 DataSheet set consisting of the following files: • MC9S08SG32 DataSheet Addendum, Rev 1 • MC9S08SG32 DataSheet, Rev 8 Freescale Semiconductor, Inc., 2012. All rights reserved.

Contextual Info: MC9S08QD4 MC9S08QD2 S9S08QD4 S9S08QD2 Data Sheet HCS08 Microcontrollers MC9S08QD4 Rev. 4 9/2008 freescale.com MC9S08QD4 Series Features 8-Bit HCS08 Central Processor Unit CPU • • • • • 16 MHz HCS08 CPU (central processor unit) HC08 instruction set with added BGND