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    S02 SOT23 Search Results

    S02 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    S02 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Revised January 2000 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X
    Text: Revised June 2000 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X s02 sot23
    Text: Revised November 1999 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X s02 sot23 PDF

    7s02

    Abstract: MA05B NC7S02 NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X SC70-5 SC70-5 ESD
    Text: NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 7s02 MA05B NC7S02M5 NC7S02M5X NC7S02P5 NC7S02P5X SC70-5 SC70-5 ESD PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


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    07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N PDF

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


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    08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02L6X NC7S02M5X NC7S02P5X E4 sot23-5
    Text: Revised November 2001 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


    Original
    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02L6X NC7S02M5X NC7S02P5X E4 sot23-5 PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02L6X NC7S02M5X NC7S02P5X
    Text: Revised May 2003 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02L6X NC7S02M5X NC7S02P5X PDF

    Untitled

    Abstract: No abstract text available
    Text: Revised August 2004 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


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    10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02L6X NC7S02M5X NC7S02P5X
    Text: Revised March 2002 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


    Original
    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02L6X NC7S02M5X NC7S02P5X PDF

    7S02

    Abstract: MA05B MO-178 NC7S02 NC7S02L6X NC7S02M5X NC7S02P5X
    Text: Revised August 2004 NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard


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    NC7S02 NC7S02 7S02 MA05B MO-178 NC7S02L6X NC7S02M5X NC7S02P5X PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    Untitled

    Abstract: No abstract text available
    Text: SGM3134 White LED Driver with Low Dropout Current Source GENERAL DESCRIPTION FEATURES The SGM3134 low-dropout bias supply for white LEDs ● Support up to 4 LEDs is a high-performance alternative to the simple ballast ● Low 40mV Dropout at 20mA resistors used in conventional white LED designs. It is


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    SGM3134 SGM3134 PDF

    AN_356

    Abstract: i2c example i2c sensor
    Text: Application Note AN_356 FT800 Interfacing I2C Sensor to VM800P Version Draft 1.0 Issue Date: 2015-06-15 The VM800P boards make an ideal platform for a monitoring and display application, due to their combination of FT800, LCD panel and ATMEGA MCU in a single module. This application note shows how a sensor can be


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    FT800 VM800P VM800P FT800, AN_356 i2c example i2c sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NC7S02 TinyLogic HS 2-Input NOR Gate General Description Features The NC7S02 is a single 2-Input high performance CMOS NOR Gate. Advanced Silicon Gate CMOS fabrication as­ sures high speed and low power circuit operation over a


    OCR Scan
    NC7S02 NC7S02 PDF

    2N5465

    Abstract: 2N5460 2N5460-2N5465 SST5461
    Text: P-Channel JFET Low Noise Amplifier C Q IO Q IC CORPORATION 2N5460- 2N5465/ SST5460- SST5465 ABSOLUTE MAXIMUM RATINGS T a =• 25°C unless otherwise specified PIN CONFIGURATION * Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 .-40V


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    2N5460- 2N5465/ SST5460- SST5465 2N5460 2N5462 2N5463 2N5465 310mW 2N5465 2N5460-2N5465 SST5461 PDF

    Untitled

    Abstract: No abstract text available
    Text: A I R C H I L D Revised March 1999 S E M IC D N D U C T O R tm NC7S02 TinyLogic HS 2-Input NOR Gate Features • S pace saving S O T23 o rS C 7 0 5-lead packages NOR Gate. A dvanced Silicon Gate C M OS fabrication assures high speed and low pow er circuit operation over a


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    NC7S02 PDF

    2N5460-2N5465

    Abstract: 2N5463 5503d 2N5465 SST5465 S02 SOT-23 MARKING 2N5464 5465 SST5461 SST5460
    Text: P-Channel JFET Low Noise Amplifier calotfic CORPORATION \J 2N5460- 2N5465/SST5460 SST5465 - ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified PIN CONFIGURATION Drairt-Gate or Sourca-Gate Voltage 2N5460 - 2N5462 . -40V


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    2N5460-2N5465/SST5460- SST5465 OT-23) SST5460 SST5463 SST5461 SST5464 SST5462 SST5465 2N5460 2N5460-2N5465 2N5463 5503d 2N5465 S02 SOT-23 MARKING 2N5464 5465 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1062; Rev 0; 6/96 y k i y j x i v k i Low -Voltage, SPST, CMOS Analog Sw itches _ Features The M AX4501/M A X4502 are s in g le -p o le /s in g le -th ro w SPST , lo w -v o lta g e , s in g le -s u p p ly , C M O S a n a lo g s w itch e s. The M AX4501 is no rm a lly o pen (NO). The


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    AX4501/M X4502 AX4501 MAX4502 OT23-5 S01/M 250C2 PDF

    asus schematic diagram

    Abstract: asus f3 asus 74MC14 Asus P5 FJ 3528 asus block diagram asus diagram asus a6 EL B17 A017
    Text: SLK BLOCK DIAGRAM V 2.00 < INTEL COPPERMINE GCL I N V ,LCD SBT OZ998 1,2,3 37 38 HOST BUS MEM BUS INTEL ON BOARD 64MB SDRAM CLOCKS 9248-10 1 c* CO I/O BOARD IC S SODIMM ONE SLOT 11 PCI BUS 10 USB P O R T *2 RJ-11 CARDBUS CONTREOLLER « I 1451 W 1 8 ,1 9 R J -4 5


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    OZ998 RJ-11 8139C M97338 NS97338 asus schematic diagram asus f3 asus 74MC14 Asus P5 FJ 3528 asus block diagram asus diagram asus a6 EL B17 A017 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA336 OPA2336 OPA4336 B U R R -B R O W N 0 [ ] SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MieroA mpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION OPA336 series micropower CMOS operational ampli­ fiers are designed for battery powered applications.


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    OPA336 OPA2336 OPA4336 OPA336 17313b5 PDF

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


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    t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12 PDF