Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
|
OCR Scan
|
PDF
|
Am29LV033C
63-ball
40-pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for
|
OCR Scan
|
PDF
|
Am29LV081
|
Untitled
Abstract: No abstract text available
Text: AMD£I AmCOXXDFLKA 4 ,8 ,2 0 , or 32 Megabyte 5.0 Volt-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance ■ — 150 ns maximum access time — 1 |^A typical standby current — Standard access time from standby mode ■ Single supply operation
|
OCR Scan
|
PDF
|
A24-A0
|
Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -7/10/12/15 IND: -10/12/14/18 VANTI S B E Y O N D P E R FO R M A N C E M A C H 2 2 1 -7 /1 0 /1 2 /1 5 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 68 Pins in PLCC 96 Macrocells
|
OCR Scan
|
PDF
|
PALCE26V12"
MACH221
ACH221
68-Pin
|
am26ls32
Abstract: No abstract text available
Text: s Am26LS32/Am26LS33 Advanced Micro Devices Quad Differential Line Receivers DISTINCTIVE CHARACTERISTICS • Input voltage range of 15 V differential or common mode on Am26LS33; 7 V (differential or common mode) on Am26LS32 The Am26LS32 meets all the requirements of
|
OCR Scan
|
PDF
|
Am26LS32/Am26LS33
Am26LS33
Am26LS32
RS-422
RS-423
q320B
|
Untitled
Abstract: No abstract text available
Text: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
|
OCR Scan
|
PDF
|
Am29F010
5555h
|
29f400b
Abstract: No abstract text available
Text: PRELIMINARY A M Dii Am29F400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
29F400
29F400B
29f400b
|
Untitled
Abstract: No abstract text available
Text: AMD£I A m 2 9 F 0 1 0 A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
|
OCR Scan
|
PDF
|
Am29F010
20-year
Am29F010A
|
Untitled
Abstract: No abstract text available
Text: FIN AL M A C H 1 1 1 COM’L: -5/7.5/10/12/15/20 IND: -7.5/10/12/14/18/24 AM D£t F a m ily High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Programmable power-down mode ■ 32 Macrocells ■ 32 Outputs ■ 5 ns tPD ■ 32 Flip-flops; 4 clock choices
|
OCR Scan
|
PDF
|
PAL26V16â
MACH110,
MACH210,
MACH211,
MACH215
MACH110
MACH111
02S7Seb
PQT044
|
Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMD* Am29LV160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
|
OCR Scan
|
PDF
|
Am29LV160D
16-Bit)
Am29LV160B
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD* Am29F400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
29F400
29F400B
|
AM90C256-12
Abstract: Am90C256-08 AM90C256-10
Text: Am90C256 256K x 1 CM O S Enhanced Page Mode Dynamic RAM PRELIMINARY 9SZ006UJV DISTINCTIVE CHARACTERISTICS • • • • • C ontinuous data rate over 25 MHz Random access within a row Flow-through colum n latch fo r pipelining Low operating current - 70 mA
|
OCR Scan
|
PDF
|
Am90C256
80-ns
130-ns
-20-ns
wf010501
AM90C256-12
Am90C256-08
AM90C256-10
|
marking AAW
Abstract: No abstract text available
Text: U S T IN S K M ie O N D l C IO R IN C A S ^ n lT b12K X 8 S R AM 512Kx 8 SRAM SRAM OUTPUT ENABLE, REVOLUTIONARY PINOUT AVAILABLE AS MILITARY SPECIFICATION • SM D 5962-95600 • MIL STD -883 FEATURES • H igh speed: 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal
|
OCR Scan
|
PDF
|
512Kx
MIL-STD-883
AS5C512K6
DS000010
marking AAW
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AM D Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents
|
OCR Scan
|
PDF
|
Am29F004B
32-pin
29F004B
|
|
|
OA55
Abstract: OA-55 Am2F010 Am29F010 Am29F010 Rev. A
Text: DRAFT AM D H Am29F010A 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
|
OCR Scan
|
PDF
|
Am29F010A
Am29F010
32-Pin
16-038-TSOP-2
TSR032
OA55
OA-55
Am2F010
Am29F010 Rev. A
|
Untitled
Abstract: No abstract text available
Text: Am29338 32-Bit Byte Queue ADVANCE INFO R M ATIO N A synchronous and Synchronous O peration - S upports com m unication between system s w ith differ e nt clocks and different bus w idths Retransm it - Data can be read out repeatedly Horizontal Cascading
|
OCR Scan
|
PDF
|
Am29338
32-Bit
F02347)
ICR00480
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AMDH Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single pow er supply operation ■ — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations
|
OCR Scan
|
PDF
|
Am30LV0064D
|
EE-21
Abstract: 28F010P
Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current
|
OCR Scan
|
PDF
|
Am28F010
32-Pin
D55752fl
D3273D
EE-21
28F010P
|
27S35
Abstract: 27S37 27s35a
Text: Am27S35/S35A/Am27S37/S37A Advanced Micro 8 ,192-B it 10 24 x8 Bipolar Registered P R O M with Program m able IN IT IA L IZ E Input Devices DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1 /3 the board space required by standard
|
OCR Scan
|
PDF
|
Am27S35/S35A/Am27S37/S37A
192-B
24-pin,
300-mil
27S35)
27S37)
S000010
Am27S35/S35A/Am
27S37/S37A
27S35/S35A/Am
27S35
27S37
27s35a
|
AM29F016B-S
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology
|
OCR Scan
|
PDF
|
Am29F016B
Am29F016
Icc41°
AM29F016B-S
|
Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV017B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Embedded Erase algorithm autom atically
|
OCR Scan
|
PDF
|
Am29LV017B
FBC048.
|
Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY A M Dii Am29LV160B 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
|
OCR Scan
|
PDF
|
Am29LV160B
16-Bit)
|
Untitled
Abstract: No abstract text available
Text: FINAL P A L C E 1 6 V 8 AMDÜ COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/25, Q-20/25 F a m ily EE CMOS 20-Pin Universal Programmable Array Logic V A N T I AN A M D C O M P A N Y DISTINCTIVE CHARACTERISTICS • Pin and function compatible with all 20-pin
|
OCR Scan
|
PDF
|
H-5/7/10/15/25,
Q-10/15/25
H-10/15/25,
Q-20/25
20-Pin
20-pin
PAL16R8
PAL10H8
300-mil
16-lead
|
Untitled
Abstract: No abstract text available
Text: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 AMDÌ1 PALCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic V A M T I AN A M D S C O M P A N Y DISTINCTIVE CHARACTERISTICS • Pin and function compatible with all GAL 20V8/AS ■ Electrically erasable CMOS technology pro
|
OCR Scan
|
PDF
|
H-5/7/10/15/25,
Q-10/15/25
H-15/25,
Q-20/25
PALCE20V8
24-Pin
20V8/AS
005-inch
|
