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    S PARAMETERS OF 5.8 GHZ TRANSISTOR Search Results

    S PARAMETERS OF 5.8 GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    S PARAMETERS OF 5.8 GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4862g

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and


    Original     		STA-5063 OT-36lifier EDS-102990 4862g PDF

    4862G

    Abstract: SIRENZA MARKING
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically designed as a driver amplifier for WLAN 802.11a and


    Original     		STA-5063 OT-36lifier EDS-102990 4862G SIRENZA MARKING PDF

    MGF4921AM

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM PDF

    MGF4921AM

    Abstract: 5442
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM 15ric 5442 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		MGF4921AM MGF4921AM PDF

    STA-5063Z

    Abstract: 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z
    Text: Product Description Sirenza Microdevices’ STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063Z OT-363 STA-5063Z EDS-102990 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z PDF

    T50Z

    Abstract: dk42 recommended land pattern for 0402 cap STA-5063Z STA-5063 S64QAM 802.11a Amplifier dRIVER AMPLIFIER AT 5GHz STA5063Z SIRENZA MARKING
    Text: Product Description Sirenza Microdevices’ STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063Z OT-363 STA-5063Z EDS-102990 T50Z dk42 recommended land pattern for 0402 cap STA-5063 S64QAM 802.11a Amplifier dRIVER AMPLIFIER AT 5GHz STA5063Z SIRENZA MARKING PDF

    4.7kohm resistor

    Abstract: STA-5063
    Text: Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063 OT-363 STA-5063 EDS-102990 4.7kohm resistor PDF

    s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ STA-5063 is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically


    Original     		STA-5063 EDS-102990 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ PDF

    transistor u8 2w

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		SZP-5026Z EDS-105366 SZP-5026Z" SZP-5026Z* SZP-5026Z-EVB1 SZP-5026Z-EVB2 35GHz SOF-26 transistor u8 2w PDF

    T1R rf

    Abstract: No abstract text available
    Text: Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		NESG7030M04 R09DS0037EJ0100 T1R rf PDF

    TRANSISTOR ML6

    Abstract: No abstract text available
    Text: bb53T31 0031772 E7T * A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T> PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures


    OCR Scan     		bb53T31 BFQ270 OT172A1 TRANSISTOR ML6 PDF

    s3331

    Abstract: No abstract text available
    Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily


    OCR Scan     		0031SSD BFQ33C OT173 s3331 PDF

    Transistor 8c4

    Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345
    Text: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily


    OCR Scan     		BFQ33C 711Dfi5t. GQH543T OT173 OT173X OT173X. Transistor 8c4 amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ TRANSISTOR BO 345 PDF

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X PDF

    transistor c 6073

    Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
    Text: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures


    OCR Scan     		LbS3T31 E5D33 BFG541 OT223 OT2230 transistor c 6073 DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015 PDF

    Untitled

    Abstract: No abstract text available
    Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency


    OCR Scan     		QQE5Q33 BFG541 OT223. PDF

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 PDF

    SZP-5026Z

    Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


    Original     		SZP-5026Z protecSZP-5026Z SZP-5026Z" 35GHz SZP-5026Z-EVB2 SZP-5026Z* SZP-5026Z-EVB1 SOF-26 EDS-105366 SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF PDF

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000 PDF

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


    OCR Scan     		bb53T31 BFQ67W OT323 UBC870 OT323. OT323 PDF

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968 PDF

    Untitled

    Abstract: No abstract text available
    Text: HE WLETT-PACKARD/ m CMPNTS blE D HEW LETT PACKARD • 4447554 DDG'ìflSS 3SS AT-60510 U P to 6 GHz Low Noise Silicon Bipolar Transistor Features 100 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz


    OCR Scan     		AT-60510 AT-60510 PDF