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    T1R rf

    Contextual Info: Data Sheet NESG7030M04 R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		NESG7030M04 R09DS0037EJ0100 T1R rf PDF

    S parameters of 5.8 GHz transistor

    Abstract: NESG7030M04 T1R rf ZL 58
    Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz


    Original     		NESG7030M04 R09DS0037EJ0100 NESG7030M04 S parameters of 5.8 GHz transistor T1R rf ZL 58 PDF