S 170 TRANSISTOR Search Results

Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D

bs170

Abstract: 5K02 MARKING BS
Contextual Info: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package

bs 170

Abstract: BS 050 transistor Q67000-S076
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

Q67000-S076

Abstract: BS 050 transistor transistor BS 170
Contextual Info: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information

PC557

Abstract: bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching C h a ra c te ris tic s T. =25°C M a x im u m R a tin g s VCEO ' c N=NPN Pt fr ^CEX VCBO VCEX mW MHz nA V 200 200 200 ( ' 206" 170 i 70 170; 170 250

Contextual Info: SIEMENS BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated ' ^GS th = -2.1.-4.0 V Type ^DS BSP 170 -60 V Type BSP 170 Ordering Code Q67000-S . . . -1.7 A ffDS(on) Package 0.35 Q, SOT-223 Marking Tape and Reel Information

Contextual Info: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type

BSP 17 D

Contextual Info: BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS th = -2.1.-4.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 170 -60 V -1.7 A 0.35 Ω SOT-223 Type BSP 170 Ordering Code Q67000-S . . . Pin 2 D Pin 3 Pin 4

S 170 TRANSISTOR

Abstract: transistor BS 170 bs 170 Q67000-S076 bs170 Transistor Bs
Contextual Info: SIPMOS Small-Signal Transistor BS 170 ● VDS 60 V 0.3 A ● ID ● RDS on 5.0 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information 1 2 3 BS 170 Q67000-S061 bulk S G D BS 170

7002 SOT23

Abstract: BS170 D 92 M - 03 DIODE bs 170 marking BS SOT23 MARKING SSG SOT23 marking code SN sot23 7002 n channel marking BS 7002
Contextual Info: SIEMENS SIPMOS Small-Signal Transistors VDS lD = 60 V = 0 . 1 9 . . . 0.3 A ^ D S o n = 5 .0 N channel • Enhancement mode TO -92 (SN 7 0 0 0 /B S 170) SOT-23 (SN 70 02) Packages: G 1 TO-92, SOT-23 ') Type B S 170 Û • • SN 7000 SN 7002 Marking Ordering code

Q67041-S4018

Abstract: transistor SMD bsp 62
Contextual Info: BSP 170 P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •dv/dt rated Type VDS ID RDS on BSP 170 P 60 V -1.9 A 0.3 Ω Pin 1 Pin 2/4 Pin 3 G D S Package @ VGS VGS = -10 V SOT-223 Ordering Code Q67041-S4018

Contextual Info: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

trimmer 20pF

Abstract: SD1485 push pull class AB RF linear L band sgs-thomson RF TRANSISTORS transistor 7g SGS-THOMSON RF POWER transistor zc
Contextual Info: S G S -T H O M S O N SD1485 !IL[ $ 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS AB PUSH PULL INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION

Contextual Info: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST

Contextual Info: S G S - IH O M S O N 5 7 . IU SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD -55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P o u t = 14 W MIN. WITH 14.0 dB GAIN

Contextual Info: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

Contextual Info: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

Contextual Info: 61096 JUS=- 2N2222A GENERAL PURPOSE NPN TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 u 0 170(4 32) r TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available

NSL12AWT1G

Contextual Info: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

marking PD

Abstract: NSL12AW NSL12AWT1
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

Contextual Info: SbE D • 'nVGSTfl D 0 Ü 7 0 0 2 170 H Z E T B HIGH FREQUENCY ZETEX S E M I C O N D U C T O R S TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator

transistor c830

Contextual Info: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS

STM101N

Contextual Info: Green Product STM101N S a mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ Rugged and reliable. 170 @ VGS=10V 100V Suface Mount Package.