RURU Search Results

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

ruru8060

Abstract: RURU8040 RURU8050
Contextual Info: RURU8040, RURU8050, RURU8060 S E M I C O N D U C T O R 80A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<75ns JEDEC STYLE SINGLE LEAD TO-218 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

tc 9310

Abstract: RURU150120
Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU150120

Contextual Info: RURU150120 Data Sheet January 2000 File Number 4146.1 150A, 1200V Ultrafast Diode Features The RURU150120 is an ultrafast diode with soft recovery characteristics trr < 200ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: « RURU8070, RURU8080, RURU8090, RURU80100 80A, 700V - 1000V Ultrafast Diodes A p r ii 1 9 9 5 Features Package • U Itrafast with Soft JEDEC STYLE SINGLE LEAD TO-218 • Operating

RURU80100

Contextual Info: RURU80100 Data Sheet January 2000 File Number 3375.3 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU100120

Abstract: URU100120
Contextual Info: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial

Contextual Info: 10 A MAX. 2.00 CL itui^rururun ; y k ✓ n )uiuk / m ) k / y \ 4 .2 0 2.00 / ñ11 k 1 / ) m / U ll \ / 1 1k P A R T NO. IN T U B E 873 A 0 -0 A * 873A 0-06* 8 7 3A 0-08* 8 7 3A 0-10* 8 7 3A 0-12* 873A 0-1A * 8 7 3A 0-16* 8 7 3A 0-18* 8 7 3A 0-20*

RURU15070

Abstract: RURU150100 RURU15080 RURU15090
Contextual Info: RURU15070, RURU15080, RURU15090, RURU150100 150A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE SINGLE LEAD TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

Contextual Info: RURU5040, RURU5050, RURU5060 ¡11995 50A, 400V - 600V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery. <65ns • Operating Temperature. . . +175 C • Reverse Voltage Up To . . . . ,600V JEDEC STYLE SING LE LEAD TO-218

RURU75120

Abstract: TA49032
Contextual Info: RURU75120 S E M I C O N D U C T O R 75A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns JEDEC STYLE SINGLE LEAD TO-218 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

RURU10060

Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Contextual Info: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.

TA9886

Abstract: RURU8050
Contextual Info: i l i h a r r is \M J SEMI CONDUCTOR RURU8040, RURU8050 RURU8060 80A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery. <75ns • Operating Temperature. +175°C

RURU5060

Contextual Info: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU50100

Contextual Info: RURU50100 Data Sheet January 2000 File Number 3376.3 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

SINGLE LEAD TO-218

Abstract: ruru10060 ruru URU100 TA49019 URU10060
Contextual Info: H A R R IS S E M I C O N D U C T O R RURU10040, RURU10050 RURU10060 100A, 400V - 600V Ultrafast Diodes D ecem ber 1993 Package Features • Ultrafast with Soft Recovery.<80ns JEDEC STYLE SINGLE LEAD TO-218 TOP VIEW • Operating

RURU80100

Contextual Info: RURU80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

TA9910

Abstract: RURU50100 RURU5070 RURU5080 RURU5090
Contextual Info: RURU5070, RURU5080, RURU5090, RURU50100 S E M I C O N D U C T O R 50A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE SINGLE LEAD TO-218 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RURU50100

Contextual Info: RURU50100 Data Sheet January 2000 File Number 3376.3 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

Contextual Info: « RURU8040, RURU8050, RURU8060 ¡11995 80A, 400V - 600V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery .<75ns • Operating Temperature. . . . +175°C • Reverse Voltage Up To . . . . . ,600V JEDEC STYLE SINGLE LEAD TO-218 • Avalanche Energy Rated

Contextual Info: ASSESS? RURU15040, RURU15050, RURU15060 150A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft JEDEC STYLE SING LE LEAD TO-218 • Operating

MUR1520 equivalent

Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Contextual Info: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100

URU100120

Abstract: RURU100120
Contextual Info: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial

RURU50100

Contextual Info: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.