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    RUGGED 600V Search Results

    RUGGED 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    RUGGED 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSA0021811

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.


    Original     		PDF FQB7N60, FQI7N60 FQB7N60 DSA0021811

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB4N60, FQI4N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 15nC Typ.


    Original     		PDF FQB4N60, FQI4N60 FQB4N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB3N60, FQI3N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ.


    Original     		PDF FQB3N60, FQI3N60 FQB3N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.


    Original     		PDF FQB2N60, FQI2N60 FQB2N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •


    Original     		PDF FQPF12N60 O-220F

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ. •


    Original     		PDF FQPF1N60 O-220F

    fqpf2n60

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ. •


    Original     		PDF FQPF2N60 O-220F fqpf2n60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    Original     		PDF FQB5N60, FQI5N60 FQB5N60

    fqaf12N60

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •


    Original     		PDF FQAF12N60 fqaf12N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD1N60, FQU1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.


    Original     		PDF FQD1N60, FQU1N60 FQD1N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.


    Original     		PDF FQB1N60, FQI1N60 FQB1N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD2N60, FQU2N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.


    Original     		PDF FQD2N60, FQU2N60 FQD2N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.


    Original     		PDF FQB12N60, FQI12N60 FQB12N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.


    Original     		PDF FQB6N60, FQI6N60 FQB6N60

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		PDF G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB12N60, FQI12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ.


    OCR Scan     		PDF FQB12N60, FQI12N60 0-55Q D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.


    OCR Scan     		PDF FQB6N60, FQI6N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB1N60, FQI1N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.


    OCR Scan     		PDF FQB1N60, FQI1N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •


    OCR Scan     		PDF FQA12N60 0-55Q

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB2N60, FQI2N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 9.0nC Typ.


    OCR Scan     		PDF FQB2N60, FQI2N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.


    OCR Scan     		PDF FQB7N60, FQI7N60 D2PAK/TO-263 D2PAK/TO-263

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    OCR Scan     		PDF FQB5N60, FQI5N60 D2PAK/TO-263 D2PAK/TO-263

    diode SM 78A

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF12N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 42nC Typ. •


    OCR Scan     		PDF FQAF12N60 0-55Q diode SM 78A

    Untitled

    Abstract: No abstract text available
    Text: SSW/I2N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 j~iA Max. @ VOS= 600V Lower Rq^ qn) : 3.892 £2 (Typ.)


    OCR Scan     		PDF SSW/I2N60A t00lC)