Untitled
Abstract: No abstract text available
Text: 8-mm round receiver with improved power handling and higher sensitivity Power Pico 8-mm Receiver The latest generation of Pico receivers delivers higher specified capacity for power handling and guaranteed Rub&Buzz-free performance in a tiny 8-mm round format.
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E2EF-X12D1-M1TGJ
Abstract: e2ef object proximity Sensor SUS303
Text: Proximity Sensor with All-stainless Housing E2EF Metal Head for long-distance Detection that Withstands Harsh Environments Where the Workpiece Can Rub against the Sensor • Completely stainless-steel housing • Long-distance detection equivalent to or greater than Proximity
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D-71154
7032-811-0/Fax:
6835-3011/Fax:
847-843-7900/Fax:
21-5037-2222/Fax:
D114-E1-01
E2EF-X12D1-M1TGJ
e2ef
object proximity Sensor
SUS303
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Untitled
Abstract: No abstract text available
Text: 3M Static Safe Hand Lotion LOTION8OZ ESD Hand Lotion Static dissipative hand lotion specially designed for use in the electronics industry. Does not leave a greasy residue. Complies with DOD 1686A and DOD HDBK 263. To use, apply a small amount of lotion in palm of hand. Gently rub hands together until lotion has absorbed
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1156-b
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Untitled
Abstract: No abstract text available
Text: DESCO INDUSTRIES INC. Technical Bulletin TB-7046 Application Instructions Reztore ESD Hand Lotion and Reztore™ Clean Hand Lotion Made in the United States of America Directions Apply a small amount of Reztore™ Hand Lotion onto the palm of the hand. Using your hands, rub the lotion into skin
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TB-7046
TB-7046
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252063
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each
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W18/W30
128-Mbit
--32-Kword
W18/30
PF48F3300W0YDQ0
RD38F3350WWZDQ1
64PSRAM
8x10x1
252063
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W18 88
Abstract: FLASH MEMORY 38F Intel SCSP FLASH MEMORY 48F intel 24024
Text: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each
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W18/W30
128-Mbit
--32-Kword
W18/30
128W18
128W18
128W30
128W30
64PSRAM
W18 88
FLASH MEMORY 38F
Intel SCSP
FLASH MEMORY 48F
intel 24024
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64W18
Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Text: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
64-Mbit
32-Mbit
16-Mbit
RD38F2240WWYDQE
64W30
RD38F2240WWZDQ0
RD38F2240WWYDQ0
RD38F2240WWDQ1
64W18
FLASH MEMORY 38F
W18 88
FLASH MEMORY 48F
64WQ
251407
PF38F2030W0YTQE
PF38F2030W0YTQ1
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128W18
Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
Text: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each
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128-Mbit
32-Mbit
--32-Kword
128W18
RD48F3000W0YBQ0
RD48F3000W0YTQ0
128W18
32PSRAM
RD38F3040W0YBQ0
RD38F3040W0YTQ0
28f128w18t
Intel SCSP
28F128W18B
28F640W18T
128W-1
128W18B
micron flash otp
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FLASH MEMORY 38F
Abstract: Intel SCSP 88-ball
Text: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7
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128WQ
--32-Kword
128W30B
128W30T
64PSRAM
RD38F3350WWZDQ1
FLASH MEMORY 38F
Intel SCSP
88-ball
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532WQ
Abstract: PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230
Text: Numonyx Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 16-Mbit, 32-Mbit — Top, Bottom or Dual flash parameter
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W18/W30
32-Mbit,
64-Mbit
16-Mbit,
32-Mbit
RD38F2240WWYDQ0
RD38F2240WWYDQ1
532WQ
PF38F1030W0YTQ2
38F1030
PF38F1030
PF38F2030W0YTQ1
pf38f1030w0ybq2
Intel SCSP
32WQ
64WQ
RD38F2230
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252063
Abstract: No abstract text available
Text: Intel Wireless Flash Memory W30 SCSP 128WQ Family Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each ■ ■ —1 Parameter Partition, 8 Parameter + 7
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128WQ
--32-Kword
128W30B
128W30T
64PSRAM
RD38F3350WWZDQ1
252063
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PF38F2030
Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit
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W18/W30
32-Mbit,
64-Mbit
32-Mbit
16-Mbit
64W18
64W30
64W30
RD38F2240WWZDQ0
PF38F2030
38F1030W0ZTQ0
PF38F2030W0YTQE
64W18
251407
PF38F1030W
PF38F
38F1030W0ZBQ0
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M511
Abstract: No abstract text available
Text: Application Note Design Considerations For General Microwave Module Usage M511 Circuit Installation ground foils will make contact w ith the body first, assuring a good module ground. The rub ber/foil accommodates the difference between circuit board ground and body ground.
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. FOR USE WITH GEPCO VPM 2000TK CABLE. 2. FOR CABLING INSTRUCTIONS SEE 3-117. 3. FOR CRIMPING USE DIE KTH-2002. 4. INTERFACE PER MIL-STD-348, FIG. 301-1 AS APPLICABLE . 5. MATERIALS: INSULATOR: TEFLON, ASTM-D-4894 GASKET: SIL. RUB., Z Z -R -7 6 5
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2000TK
KTH-2002.
MIL-STD-348,
ASTM-D-4894
ASTM-B-196
ASTM-B16
-S-365
MIL-G-45204
370OR:
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UG-30E
Abstract: No abstract text available
Text: DASH NO. M CODE MADE FROM REVISIONS GSD ch an ges CN 32389 E REDRAWN JCA 07/27/90 4:1 APPROX surface a rea KN—93—01 NOTES: 1. MATERIALS: 0-RING: SIL. RUB., ZZ-R-765 LOCKWASHER: PHOS. BRONZE, QQ-B-750 CONTACT F: BER. COP., ASTM-B-196 ALL OTHER PARTS: BRASS. QQ-B-626
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KN--93--01
ZZ-R-765
QQ-B-750
ASTM-B-196
QQ-B-626
Q-S-365
UG-30E
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Untitled
Abstract: No abstract text available
Text: DASH NO. M CODE MADE FROM GSD REVISIONS c h an ges CN 33144 C REDRAWN JCA 06/11/91 O I CN 35741 C CO CO KVH 09/06/94 I O vJ NOTES: 1. MATERIALS: INSULATORS: TEFLON, ASTM-D-1457 GASKET: SIL. RUB., QQ-R-765 OUTER CONTACT: PHOS. BRONZE, QQ-B-750 SPRING WASHER ? nrn
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ASTM-D-1457
QQ-R-765
QQ-B-750
ASTM-D-196
ASTM-B16
Q-S-365
JCA1730
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1345 X 1"
Abstract: geh11
Text: DASH NO. M CODE MADE FROM NOTES: 1. INTERFACE PER MIL-STD-348, FIG. 301-1. 2. MATERIALS: INSULATOR: TEFLON, ASTM-D-1457 GASKET 0-RING: SIL. RUB., ZZ-R-765 WASHER: PHOS. BRONZE, QQ-B-750 SPRING WASHER OUTER CONTACT: BER. COP., ASTM-B-196 ALL OTHER METAL PARTS: BRASS. ASTM-B16
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MIL-STD-348,
ASTM-D-1457
ZZ-R-765
QQ-B-750
ASTM-B-196
ASTM-B16
TERMINA-36
QQ-S-365
MIL-G-45204
1345 X 1"
geh11
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M37710EFBFP
Abstract: No abstract text available
Text: M IT S U B IS H I M ICROCOMPUTERS Th\*!S, , vt, rub}^ w M37710EFBXXXFP M37710EFBFS ' paras*«1 PROM VE R SIO N of M 3 7 7 1 0 M F B X X X F P DESCRIPTION • Single power supply. 5 V ± 1 0 % The M37710EFBXXXFP is a built-in PROM single-chip mic
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M37710EFBXXXFP
M37710EFBFS
M37710EFBXXXFP
80-pin
16-bit
M37710EFBFP
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. INTERFACE PER MIL-STD-348, FIG. 301-1. 2. MATERIALS: INSULATOR: TEFLON, ASTM-D-1457 GASKET: SIL. RUB., Z Z -R -7 6 5 LOCKWASHER: PHOSPHOR BRONZE, Q Q -B -750 SPRING WASHER: BER. COP., ASTM-B-196 ALL OTHER PARTS: BRASS, ASTM-B16 3. FINISHES: S w a s h e r i SILV ER PlATEPER QQ- S - J65
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MIL-STD-348,
ASTM-D-1457
ASTM-B-196
ASTM-B16
JCA2329
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATA CAD GENERATED DRAWING DRAWI NG DCN CONTROLLED DOCUMENT DWG. N O . 4087-0003 MATERIALS: BODY NUT: AND HEX B RASS P E R ASTM TEMPER H 0 2 . 625 HEX. O-RING 1/2-28 INSULATORS: TEFLON O-RING: S I L I C O N E RUB B ER CLASS I I B ,G R AD E GLASS OUTER R I N G P E R ASTM A 2 9 , G R A D E
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C3B000,
C17300.
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Untitled
Abstract: No abstract text available
Text: AMP Pro/ENGINEER 1471-9 DRAWING REV 27JUN96 T H I S DRAW I NG I S U N P U B L I S H E D . DIFFUSION RESTREINTE C O P Y R I G HT 19 R E L E A S E D FOR RUB L I C A T ION L I B R E A LA D I F F U S I O N BY AMP I N C O R P O R A T E D . TA OL UL S R IDGRHOTIST S R ER SE ES RE VR EV DE .S
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27JUN96
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ci 94v0
Abstract: ci 94vo smart card ci
Text: T H I S DRAW I NG I S U N P U B L I S H E D . DIFFUSION RESTREINTE C O P Y R I G HT 19 R E L E A S E D FOR RUB L I C A T ION L I B R E A LA D I F F U S I O N BY AMP I N C O R P O R A T E D . TA OL UL S R IDGRHOTIST S R ER SE ES RE VR EV DE .S REV I S I O N S
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EROO-7954
16DEC99
05MAR98
27JUN96
ci 94v0
ci 94vo
smart card ci
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7816A
Abstract: No abstract text available
Text: T H I S DRAW I NG I S U N P U B L I S H E D . DIFFUSION RESTREINTE C O P Y R I G HT 19 R E L E A S E D FOR RUB L I C A T ION L I B R E A LA D I F F U S I O N BY AMP I N C O R P O R A T E D . TA OL UL S R IDGRHOTIST S R ER SE ES RE VR EV DE .S REV I S I O N S
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Untitled
Abstract: No abstract text available
Text: OF OPTICAL FIBER CONNECTOR NOTES ON HANDLING CABLES WITH OPTICAL CONNECTORS . GENERAL Optical fiber cables have many features, but they can be broken easily if handled improperly because they are m ade of brittle glass. W hen installing them or handling them in general applications, take great care not to apply a greater
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