RTC37 Search Results

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 QD1S013 7 MAINTENANCE TYPE LV3742E24R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier from 3,7 to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide

Contextual Info: ObE D N AMER P H I L I P S / D I S C R E T E • Jl MAINTENANCE TYPE D D lS in 1 PV3742B4X T - 'll- O ' MICROWAVE POWER TRANSISTOR N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz, . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

rtc37

Abstract: PV3742B4X P10T MARKING CODE N for RF transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE Jl DfaE D ^53^31 D D lSin PV3742B4X T - 33-09 MICROWAVE POWER TRAN SISTO R N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz. , Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide

marking S3 amplifier

Abstract: LV3742E24R rtc37 M3 MARKING CODE
Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 MAINTENANCE TYPE 0015013 LV3742E24R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier from 3,7 to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide