circuit diagram for micro controller based caller
Abstract: TDK 78P7200-IH 74FCT164245TPV D44 SOT23 RTD25 Framatome Connectors MS gal programming timing chart 3225 EPCOS Radiall R126 RJ45 to DB9F cable adapter
Text: To o l D es cr ip ti on , DS 1, J ul y 20 00 EASY3445 M 13 F X E v a lu a t i on S y s t e m M 13 M u lt i p le x e r a n d D S 3 F r am e r PEB3445 Datacom N e v e r s t o p t h i n k i n g . Edition 2000-07-15 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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EASY3445
PEB3445
D-81541
M13FX
EASY3445
circuit diagram for micro controller based caller
TDK 78P7200-IH
74FCT164245TPV
D44 SOT23
RTD25
Framatome Connectors MS
gal programming timing chart
3225 EPCOS
Radiall R126
RJ45 to DB9F cable adapter
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE ObE D • ^ 5 3 1 3 1 0014^45 7 ■ LKE21050T MAINTENANCE TYPE for new design use LVE21050R T -3 1 ~ 0 7 MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.
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LKE21050T
LVE21050R)
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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LTE42005S
LTE42008R
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application for bt 151
Abstract: LTE42005S LTE42008R R3305
Text: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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bL53131
LTE42005S
LTE42008R
LTE42005S
application for bt 151
LTE42008R
R3305
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csi 93c46
Abstract: LC502 20pmt04a IC565 ycl 20PMT04A
Text: - l 3 VER: 0 . 1 _ K ^ v J !U 334280110 F OR Q U IC K S T A R T M O D E 50 0M H z 45 0M H z 40 0M H z VC C C U f' STt*v . Ü R237 R34 10K 10K = ^ S 'JM P ,. 13 - X J2 _ _ _ -< < rC s D *‘ “r i i - siz e D o c u m e n t Numbe> C PU _A 1 60V 1 60V 1 35 V
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20PMT04A
N2907
2N7002
csi 93c46
LC502
IC565
ycl 20PMT04A
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transistor 1431a
Abstract: 1431A transistor
Text: N AMER PHILIPS/DISCRETE bb53131 oom*!? *i ObE D LTE42012R A T -3 3-g^r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.
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bb53131
LTE42012R
transistor 1431a
1431A transistor
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Radiall R126
Abstract: RTC20 100N K 275 PHILIPS Framatome 81 Mux circuit diagram for micro controller based caller corelis JTAG CONNECTOR Framatome 211 pc mux ic 157 RJ45 to DB9F cable adapter
Text: T o o l D e s c r ip t i o n , D S 2 , A p r i l 2 0 0 1 EASY3445 TE3 -MU X Eva lua ti on System M1 3 Multip lexe r a nd DS3 Framer PEB3445 Datacom N e v e r s t o p t h i n k i n g . Edition 2001-04-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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Original
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EASY3445
PEB3445
D-81541
Radiall R126
RTC20
100N K 275 PHILIPS
Framatome
81 Mux
circuit diagram for micro controller based caller
corelis JTAG CONNECTOR
Framatome 211 pc
mux ic 157
RJ45 to DB9F cable adapter
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PDF
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microphone amplifier with alc
Abstract: RTC18 REG61 dg 3200 dac RTC19 rtc10 RTC20 RTC31 DF2A11 DF4A12
Text: 1/4 ◇Structure ◇Product name ◇Type ◇Applications ◇Functions Silicon Monolithic integrated circuit Audio interface + Video driver + Back up + RTC LSI BU76292AGUW DSC, etc ＜Audio part＞ ・Monaural・16 bit ΔΣCODEC ・Monaural microphone amplifier with ALC function
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BU76292AGUW
Monaural16
300mW
64-step
clock12MHz24MHz27MHz16fs32fs64fs
48kHz)
16bit
R1010A
microphone amplifier with alc
RTC18
REG61
dg 3200 dac
RTC19
rtc10
RTC20
RTC31
DF2A11
DF4A12
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RTC190
Abstract: LKE21050T LVE21050R
Text: N AMER Df aE PH ILIP S /D IS C R E TE D • b b SBT31 0014145 MAINTENANCE TYPE 7 ■ LKE21050T for new design use LVE21050R MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz. Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry and gold sandwich
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LVE21050R)
0Q1414S
LKE21050T
RTC190
LKE21050T
LVE21050R
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