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    RT 108 POWER TRANSISTOR Search Results

    RT 108 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLF Rochester Electronics BLF278 - VHF Push-Pull Power VDMOS Transistor Visit Rochester Electronics Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    BLF1043 Rochester Electronics LLC BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    ON5040 Rochester Electronics LLC ON5040 - RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    RT 108 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOD 12K

    Abstract: NTC probe 2.2k NTC 103 10K THERMODISC thermistor ntc 103 3977 C92NA NTC Thermistor 2.2k ntc 12k Mil-T-23648
    Text: TO-92 PACKAGE TEMPERATURE SENSOR NTC Thermistor Probes Applications • • • • Radial NTC disc replacement Probe designs PCB temperature monitoring Power supply fan control Operating Temperature Range -40° to 140°C Thermal Time Constant 3 Seconds typical oil ; 11 Seconds typical (air)


    Original     		PDF MIL-T-23648A) E179543 C92NA-222J C92NA-502J C92NA-103J C92NP-123J TOD 12K NTC probe 2.2k NTC 103 10K THERMODISC thermistor ntc 103 3977 C92NA NTC Thermistor 2.2k ntc 12k Mil-T-23648

    Untitled

    Abstract: No abstract text available
    Text: TO-92 PACKAGE TEMPERATURE SENSOR NTC Thermistor Probes Applications • • • • Radial NTC disc replacement Probe designs PCB temperature monitoring Power supply fan control Operating Temperature Range -40° to 140°C Thermal Time Constant 3 Seconds typical oil ; 11 Seconds typical (air)


    Original     		PDF MIL-T-23648A) E179543 C92NA-222J C92NA-502J C92NA-103J C92NP-123J

    PTC 1k thermistor conversion table

    Abstract: hai 7358 ptc 3225 k 250 0216 STR 6267 mt 1389 de thermistor ntc 5k NTC Thermistor 301 str 6267 f ntc 33 0528 str f 6267
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book NTC THERMISTOR ASSEMBLIES vishay dale vse-db0060-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0060-0611 PTC 1k thermistor conversion table hai 7358 ptc 3225 k 250 0216 STR 6267 mt 1389 de thermistor ntc 5k NTC Thermistor 301 str 6267 f ntc 33 0528 str f 6267

    PIN diode SPICE model

    Abstract: BF100 transistor 8E-15 A741 THS3001 pspice model list transistor
    Text: Application Report SLOA038 - October 1999 THS3001 SPICE Model Performance Jim Karki Mixed Signal Products ABSTRACT This application report outlines the SPICE model of the THS3001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison, model listing,


    Original     		PDF SLOA038 THS3001 com/sc/docs/products/analog/THS3001 PIN diode SPICE model BF100 transistor 8E-15 A741 pspice model list transistor

    ja1050

    Abstract: AH1014 TJA1043 TJA1042 LEARN ELECTRONIC ECU CAR BLOCK UJA1075 transistor A1048 car sensor ignition UJA1078 tja1051 Application Note
    Text: TR1014 Application Hints - Standalone high speed CAN transceiver TJA1042 / TJA1043 / TJA1048 / TJA1051 Rev. 01.00 — 30 April 2010 Document information Info Content Title Application Hints - Standalone high speed CAN transceiver TJA1042 / TJA1043 / TJA1048 / TJA1051


    Original     		PDF TR1014 TJA1042 TJA1043 TJA1048 TJA1051 TJA1042, ja1050 AH1014 LEARN ELECTRONIC ECU CAR BLOCK UJA1075 transistor A1048 car sensor ignition UJA1078 tja1051 Application Note

    Tektronix 7603

    Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
    Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO


    OCR Scan     		PDF CB-19 Tektronix 7603 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    SD1428

    Abstract: sd1446 SD1477 M113 M135 M164 M175 M177 SD1273 SD1480
    Text: SILICON POWER TRANSISTORS ÌPRf i m A broad range of devices are offered for the popular frequency bands in the VHF spectrum. Applications include low and mid-band FM mobile radio, FM broadcast and aircraft communications. .380 4LFL M113 .500 4LFL (M174)


    OCR Scan     		PDF sd1446 sd1405 sd1726 sd1727 sd1728 sd1275 sd1275-01 sd1273 sd1012 sd1012-03 SD1428 SD1477 M113 M135 M164 M175 M177 SD1480

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


    OCR Scan     		PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    BLV37

    Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
    Text: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain


    OCR Scan     		PDF BLV37 OT179 BLV37 ferroxcube wideband hf choke 4312 020 36642 B34 transistor

    Untitled

    Abstract: No abstract text available
    Text: i i N AHER P H I L IPS/DISCRETE b^E D bbS3T31 A 003^023 7TA BLV37 IAPX VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in VH F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain


    OCR Scan     		PDF bbS3T31 BLV37

    ANI 1015

    Abstract: No abstract text available
    Text: H l i f r S wrr ^ .i-ii j i . T fc.-mi f W ? C iy W 0 liJ f 140 Com m erce Drive m u iK ^ u i t f V i y v f i t C iPA n 18938-1013 tv « /v v t u w Montgomeryvilfe, Tel: 2151 831 -9840 ^ »» ^ a ^ p SD1 01 5 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS


    OCR Scan     		PDF 108-152MHz ANI 1015

    4312 020 36642

    Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain


    OCR Scan     		PDF 711002b BLV37 OT179 711Da2b 4312 020 36642 BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312

    blv 33 transistor

    Abstract: BLV25 rf 2222 vp1020 multilayer
    Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;


    OCR Scan     		PDF BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer

    rt 108 power transistor

    Abstract: QRD1114 QRB1113 QRB1134 QRB1114 sensor QRD1114
    Text: FQ OPTOELECTRONICS REFLECTIVE OBJECT SENSORS P a rt N um ber Dust C over Test C o n d itio n s ' f/ V ce b V CE0 m in u n its V m in *C | O N ) M ax R a tin g T a b le P h o to tr a n s is to r OPB703 YES 40 mA/5 V .200 mA 30 K OPB704 YES 40 mA/5 V .200


    OCR Scan     		PDF OPB703 OPB704 QRB1113 QRB1114 OPB705 QRC1113 QRD1313) rt 108 power transistor QRD1114 QRB1134 QRB1114 sensor QRD1114

    2SD1582

    Abstract: IC HE 4011 TL08 015 A0886
    Text: NEC j i i r / V Y Z 2S D 1582 Silicon T ran sis to r J V = l> N P N x fc “ h =7 > > 7 * 9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier A 7 V X— 2 S D 1 5 8 2 ÌÌ, 9 9 < , L fr i) t LT, ^ PACK A G E DIMENSIONS hFEl ' 7 > y X ^ t ,


    OCR Scan     		PDF 2SD1582 2SD1582Ã 5H0975 2SD1582 IC HE 4011 TL08 015 A0886

    transistor eb 2030

    Abstract: 2SC2350
    Text: 2SC2350 High Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor PACK A G E D IM E N S IO N S in m illim eters inches • Low Noise Figure: N F = 2 .3 d B T Y P . (f=500M H z) • High Maximum Available Gain: M AG = 17dB TY P . (f= 500M H z) z.5 ’ § ?


    OCR Scan     		PDF 2SC2350 transistor eb 2030 2SC2350

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor

    NEC 2532 n 749

    Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822

    Untitled

    Abstract: No abstract text available
    Text: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .


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    2N7002x

    Abstract: transistor SOT23 1d 2N7002M
    Text: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro­


    OCR Scan     		PDF 2N7002 2N7002M 2N7002X OT-23 OT-23 transistor SOT23 1d

    lts 542

    Abstract: UFN540 FN640
    Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF UFN540 UFN541 UFN542 UFN543 lts 542 UFN540 FN640

    M5226P

    Abstract: 108-kHz M5226 1800P Graphic Equalizer ic
    Text: MITSUBISHI SOUND PROCESSOR ICs M5226P,FP 5-ELEMENT GRAPHIC EQUALIZER IC DESCRIPTION The M5226 is a 5-element graphic equalizer 1C best suited to audio systems. It has a built-in 5-element resonance circuits with transistor system and an output OP amp. The 1C can be used in hybrid ¡Cs and compact sets of high-density assemblies.


    OCR Scan     		PDF M5226P M5226 1800p 3900p 156Hz 412Hz 08kHz 29kHz 17kHz 108-kHz Graphic Equalizer ic

    AT41511

    Abstract: No abstract text available
    Text: HEWLETT- PAC KARD/ CMPNTS blE T> • 4447584 QOCHaiS 77b H H P A W hp% H EW LETT mL'KM PACKARD Low Cost General Purpose Transistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz


    OCR Scan     		PDF AT-41511 AT-41586 AT-41511 RS-481, 4447SÃ AT-41586 AT-41586-TR1 AT-41586-TR2 44475A4 AT41511