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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 Previous: REJ03G1272-0400 Rev.5.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching


    Original     		PDF RQJ0303PGDQA R07DS0295EJ0500 REJ03G1272-0400) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive


    Original     		PDF RQJ0303PGDQA R07DS0295EJ0600 PLSP0003ZB-A

    RQJ0303PGDQATL-H

    Abstract: RQJ0303PGDQATLH
    Text: Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 Previous: REJ03G1272-0400 Rev.5.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching


    Original     		PDF RQJ0303PGDQA R07DS0295EJ0500 REJ03G1272-0400) PLSP0003ZB-A RQJ0303PGDQATL-H RQJ0303PGDQATLH