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    Toshiba America Electronic Components RN2113MFV(TPL3)

    X34 Pb-F VESM TRANSISTOR Pd 150mW F 1Mhz (LF) - Tape and Reel (Alt: RN2113MFV(TPL3))
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    Avnet Americas RN2113MFV(TPL3) Reel 8,000
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    Mouser Electronics RN2113MFV(TPL3)
    • 1 $0.22
    • 10 $0.135
    • 100 $0.084
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    Toshiba America Electronic Components RN2113MFV,L3F

    Digital Transistors 47kohm 50V 0.1A SOT-723
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    Mouser Electronics RN2113MFV,L3F
    • 1 $0.13
    • 10 $0.08
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    Toshiba America Electronic Components RN2113MFV(TL3,T)

    Digital Transistors Bias Resistor PNP 47kohm -100mA -50V
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    Mouser Electronics RN2113MFV(TL3,T)
    • 1 $0.18
    • 10 $0.11
    • 100 $0.065
    • 1000 $0.038
    • 10000 $0.025
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    RN2113MFV Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2113MFV Toshiba Transistors Original PDF
    RN2113MFV Toshiba Japanese - Transistors Original PDF
    RN2113MFV,L3F Toshiba America Electronic Components TRANS PREBIAS PNP 50V 0.1A VESM Original PDF
    RN2113MFV(TPL3) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 150MW VESM Original PDF

    RN2113MFV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original     		RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation, PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.


    Original     		RN2112MFV RN2113MFV RN2112MFV, RN1112MFV RN1113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.


    Original     		RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 A wide range of resistor values is available for use in various circuits.


    Original     		RN2112MFV RN2113MFV RN1112MFV RN1113MFV PDF

    RN2113MFV

    Abstract: RN1112MFV RN1113MFV RN2112MFV
    Text: RN2112MFV, RN2113MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112MFV, RN2113MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		RN2112MFV, RN2113MFV RN1112MFV RN1113MFV RN2112MFV RN2113MFV RN1113MFV RN2112MFV PDF

    RN2113MFV

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112MFV,RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits. Complementary to the RN2112MFV~RN2113MFV


    Original     		RN1112MFV RN1113MFV RN2112MFV RN2113MFV RN2113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV 21l1A
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22±0.05 0.8±0.05 0.4 Lead (Pb) - free 1.2±0.05 1 0.4 1.2±0.05


    Original     		RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV 21l1A PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV to RN2113MFV


    Original     		RN1112MFV RN1113MFV RN2112lled RN1113MFV RN2112MFV RN2113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits. Complementary to the RN1112MFV~RN1113MFV


    Original     		RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 1.2±0.05


    Original     		RN2112MFV RN2113MFV RN1112MFV RN1113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN2112MFV, RN2113MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112MFV, RN2113MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		RN2112MFV, RN2113MFV RN1112MFV RN1113MFV RN2112MFV RN1113MFV RN2112MFV RN2113MFV PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV 21l1A
    Text: RN1112MFV, RN1113MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1112MFV, RN1113MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		RN1112MFV, RN1113MFV RN2112MFV RN2113MFV RN1112MFV RN1112MFV RN1113MFV RN2113MFV 21l1A PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		RN1112MFV RN1113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112MFV,RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits.


    Original     		RN1112MFV RN1113MFV RN2112MFV RN2113MFV RN1113MFV RN2113MFV PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112MFV,RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22 ± 0.05 1.2 ± 0.05 z A wide range of resistor values is available for use in various circuits.


    Original     		RN1112MFV RN1113MFV RN2112MFV RN2113MFV RN1113MFV RN2113MFV PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN1112MFV, RN1113MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1112MFV, RN1113MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		RN1112MFV, RN1113MFV RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN2113MFV PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF