RN2108F Search Results

Contextual Info: TOSHIBA R N 2 1 0 7 F -R N 2 1 0 9 F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design

RN1107FS

Abstract: RN1109FS RN2107FS RN2108FS RN2109FS
Contextual Info: RN2107FS~RN2109FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵 RN2107FS,RN2108FS,RN2109FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN2107F

Abstract: RN2108F RN1107F RN1109F RN2109F
Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1107FS

Abstract: RN1109FS RN2107FS RN2108FS RN2109FS
Contextual Info: RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.15±0.05 0.2±0.05 • Incorporating a bias resistor into a transistor reduces parts count.

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2108FT RN2109FT
Contextual Info: RN2107FT~RN2109FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107FT, RN2108FT, RN2109FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN2108FT

Abstract: RN2109FT RN1107FT RN1108FT RN1109FT RN2107FT
Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin

ic 311 pdf datasheets

Abstract: RN1107F RN1109F RN2107F RN2108F RN2109F
Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

YJ 0078

Abstract: RN1107FT RN1108FT RN1109FT RN2107FT RN2108FT RN2109FT
Contextual Info: RN2107FT~RN2109FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107FT, RN2108FT, RN2109FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN2107FT

Abstract: RN1107FT RN1109FT RN2108FT RN2109FT
Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107FS

Abstract: RN1109FS RN2107FS RN2108FS RN2109FS
Contextual Info: RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Reducing the parts count enable the manufacture of ever more

Contextual Info: RN2107FV~RN2109FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107FV,RN2108FV,RN2109FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit in mm 0.4 Complementary to RN1107FV~RN1109FV 0.8±0.05

Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1107FT

Abstract: RN1109FT RN2107FT RN2108FT RN2109FT
Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107FS

Abstract: RN1109FS RN2107FS RN2108FS RN2109FS
Contextual Info: RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Reducing the parts count enable the manufacture of ever more

Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT,RN2108FT,RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107F

Abstract: RN1109F RN2107F RN2108F RN2109F
Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107FT,RN2108FT,RN2109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

2109F

Abstract: RN2107F-RN2109F RN2109F RN1107F RN1109F RN2107F RN2108F
Contextual Info: RN2107F～RN2109F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107F,RN2108F,RN2109F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

nj TRANSISTOR

Contextual Info: TOSHIBA RN2107F-RN2109F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors

Contextual Info: RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1107FV

Abstract: RN1109FV RN2107FV RN2108FV RN2109FV
Contextual Info: RN2107FV~RN2109FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2107FV, RN2108FV, RN2109FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit in mm 0.4 Complementary to RN1107FV~RN1109FV 0.8±0.05