RN1132F Search Results

RN1131FT

Abstract: RN1132FT RN2131FT RN2132FT
Contextual Info: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.

Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.

RN2132FV

Abstract: RN1131FV RN1132FV RN2131FV
Contextual Info: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05

Contextual Info: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05

Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z Extra small package(TESM) is applicable for extra high density fabrication.

RN1131F

Abstract: RN1132F RN2131F RN2132F
Contextual Info: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1131F

Abstract: RN1132F RN2131F RN2132F
Contextual Info: RN2131F,RN2132F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2131F,RN2132F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN2131F

Abstract: RN1131F RN1132F RN2132F
Contextual Info: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1131F

Abstract: RN1132F RN2131F RN2132F
Contextual Info: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

RN2132FT

Abstract: RN1131FT RN1132FT RN2131FT
Contextual Info: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication.

Contextual Info: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication.

RN2132FV

Abstract: RN1131FV RN1132FV RN2131FV
Contextual Info: RN2131FV, RN2132FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FV, RN2132FV Unit : mm 0.22±0.05 Built-in bias resistors 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05 0.4

Contextual Info: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ