Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RM73B Search Results

    SF Impression Pixel

    RM73B Price and Stock

    KOA Speer Electronics Inc RM73B2BT121J

    Res Thick Film 1206 120 Ohm 5% 0.25W(1/4W) ±200ppm/°C Molded SMD Automotive Punched Paper T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com RM73B2BT121J 25,149
    • 1 $0.768
    • 10 $0.768
    • 100 $0.305
    • 1000 $0.1284
    • 10000 $0.1284
    		Buy Now

    MISC. RESISTORS RM73B2B511J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries RM73B2B511J 245
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    MISC. RESISTORS RM73B2B623J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bisco Industries RM73B2B623J 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    KOA Speer Electronics Inc RM73B1JTDD394J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RM73B1JTDD394J 810,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KOA Speer Electronics Inc RM73B1ETP430J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RM73B1ETP430J 50,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    RM73B1ETP430J 2,538
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more RM73B price and stock on Findchips.com

    RM73B Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RM73B1JT105J KOA Speer Electronics RSM, TKF 1M 1/10W 5% 0603 Original PDF
    RM73B1JT105J KOA Speer Electronics RSM, TKF 1M 1/10W 5% 0603 Original PDF
    RM73B2AT822 KOA Speer Electronics RES,THICK FILM,8.2KOHMS,150WV,2±% TOL,0805-CASE Scan PDF
    RM73Bxx Series KOA Speer Electronics Flat Chip Resistors Scan PDF

    RM73B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RM73B2A-J

    Abstract: RK73H2B-F RM73B2B-J RK73H2A-F RM73B1J-J 22k resistor 200 watt RK73H1J-F RM73B1J
    Text: :< O à \ SURFACE MOUNT RESISTOR LAB KITS SPEER ELECTRONICS, IN C . TYPES RM73B2B-J 1206 Size, 1/4 watt, 5% RM73B2A-J 0805 Size, 1/8 watt, 5% RM73B1J-J 0603 Size, 1/10 watt, 5% VALUES PER KIT


    OCR Scan     		RM73B2B-J RM73B2A-J RM73B1J-J RK73H2B-F RK73H2A-F 22k resistor 200 watt RK73H1J-F RM73B1J PDF

    MGA-633P8

    Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


    Original     		MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


    Original     		MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN PDF

    RM73B1J

    Abstract: 104021
    Text: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		504bD87 00D1721 RM73B1J 104021 PDF

    Untitled

    Abstract: No abstract text available
    Text: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		504bD87 00D1721 PDF

    11x11mm

    Abstract: cl21b103kbnc SAMSUNG SAMSUNG 0805 thick film resistor CL21B103KB 50V 10uF X7R keystone 1028 AN-1030 HIP6311 IP2001 TP10
    Text: PD - 94089D iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile


    Original     		94089D iP2001 iP2001 11x11mm cl21b103kbnc SAMSUNG SAMSUNG 0805 thick film resistor CL21B103KB 50V 10uF X7R keystone 1028 AN-1030 HIP6311 TP10 PDF

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35 PDF

    eeprom programmer schematic 24c08

    Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
    Text: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or


    Original     		SPWA023 1000PF DS0026-001 eeprom programmer schematic 24c08 motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331 PDF

    Ferrite core 13.56 MHz RFID tag inductor antennas

    Abstract: OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral
    Text: microID 13.56 MHz RFID System Design Guide INCLUDES: • • • • • • • • Passive RFID Basics Application Note MCRF355/360 Data Sheet Microchip Development Kit Sample Format MCRF355/360 Factory Programming Support SQTPSM MCRF355/360 Applications Application Note


    Original     		MCRF355/360 /DS21299C Ferrite core 13.56 MHz RFID tag inductor antennas OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral PDF

    Untitled

    Abstract: No abstract text available
    Text: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available


    OCR Scan     		120/yin/3 D17E1 PDF

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW PDF

    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		MRF284 MRF284LR1 MRF284LSR1 PDF

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090 PDF

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3 PDF

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 PDF

    TO272

    Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
    Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to


    Original     		MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 TO272 RM73B2BT A113 GRM42 MWIC930GR1 2XE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		MRF21090/D MRF21090 MRF21090S PDF

    j340 motorola make

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		MRF284 MRF284LR1 MRF284LSR1 MRF284 PDF

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads PDF