RLT1060_350G Search Results

RLT1060_350G Result Highlights (5)

Part	Manufacturer	Description
NX6350GP33-AZ	Renesas Electronics Corporation	270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
NX6350GP31-AZ	Renesas Electronics Corporation	270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
NX6350GP29-AZ	Renesas Electronics Corporation	270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application
UPD70F3350GC(A)-8EA-A	Renesas Electronics Corporation	32-bit Microcontrollers
NX6350GP27-AZ	Renesas Electronics Corporation	270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 & 10 Gb/s E-PON ONU Application

RLT1060_350G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RLT1060_350G Abstract: No abstract text available Text: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)	Original	RLT1060-350G OT-148) rlt1060 RLT1060_350G	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

RLT1060_350G

Abstract: No abstract text available
Text: RLT1060-350G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 1064 nm, typ. Max. optical power: 350 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C)

Original

RLT1060-350G OT-148) rlt1060 RLT1060_350G

PDF