Untitled
Abstract: No abstract text available
Text: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0200 Rev.2.00 Nov 22, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KM
REJ03G1226-0200
RKP201KM
PXSF0002ZA-A
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PUSF0002ZB-A
Abstract: RKP201KK
Text: RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1224-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KK
REJ03G1224-0200
PUSF0002ZB-A
PUSF0002ZB-A
RKP201KK
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RKP201KN
Abstract: No abstract text available
Text: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KN
REJ03G1311-0200
0805type;
PXSN0002ZA-A
RKP201KN
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PUSF0002ZA-A
Abstract: RKP201KM
Text: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0100 Rev.1.00 Jun 10, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KM
REJ03G1226-0100
PXSF0002ZA-A
tempera5-900
Unit2607
PUSF0002ZA-A
RKP201KM
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RKP201KN
Abstract: No abstract text available
Text: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KN
REJ03G1311-0200
0805type;
PXSN0002ZA-A
RKP201KN
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RKP201KL
Abstract: No abstract text available
Text: RKP201KL Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1225-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KL
REJ03G1225-0200
PXSF0002ZA-A
RKP201KL
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PUSF0002ZA-A
Abstract: RKP201KM
Text: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0200 Rev.2.00 Nov 22, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KM
REJ03G1226-0200
PXSF0002ZA-A
PUSF0002ZA-A
RKP201KM
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Untitled
Abstract: No abstract text available
Text: RKP201KL Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1225-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KL
REJ03G1225-0200
RKP201KL
PXSF0002ZA-A
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Untitled
Abstract: No abstract text available
Text: RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1224-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KK
REJ03G1224-0200
RKP201KK
PUSF0002ZB-A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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PUSF0012ZA-A
Abstract: RKP200KP RKP201KN RKP410KS
Text: RKP410KS Composite Pin Diode for Antenna Switching REJ03G1544-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP410KS
REJ03G1544-0200
MFP12)
MFP12
PUSF0012ZA-A
RKP200KP
RKP201KN
REJ03G1544-0100
PUSF0012ZA-A
RKP410KS
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Untitled
Abstract: No abstract text available
Text: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP406KS
REJ03G1461-0100
MFP12)
MFP12
PUSF0012ZA-A
HVL142AM
RKP201KN
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PUSF0012ZA-A
Abstract: RKP200KP RKP201KN RKP403KS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HVL142AM
Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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EIAJ-ED-4701
Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27G0006-0400/Rev
EIAJ-ED-4701
EIAJED-4701
1SS106
EIAJ-ED-4131
RKP450KE
EIAJ standards
zener diode reliability fit
1s2076
smd diode ED
1SS270
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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Untitled
Abstract: No abstract text available
Text: RKP403KS Composite Pin Diode for Antenna Switching REJ03G1347-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP403KS
REJ03G1347-0200
MFP12)
MFP12
PUSF0012ZA-A
RKP200KP
RKP201KN
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Untitled
Abstract: No abstract text available
Text: RKP407KS Composite Pin Diode for Antenna Switching REJ03G1462-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP407KS
REJ03G1462-0100
MFP12)
MFP12
PUSF0012ZA-A
HVL142AM
RKP201KN
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PUSF0012ZA-A
Abstract: RKP200KP RKP201KN RKP410KS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: RKP404KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1348-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP404KS
REJ03G1348-0100
MFP12)
RKP404KS
MFP12
PUSF0012ZA-A
RKP200
RKP201
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Untitled
Abstract: No abstract text available
Text: RKP403KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1347-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)
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RKP403KS
REJ03G1347-0100
MFP12)
RKP403KS
MFP12
PUSF0012ZA-A
RKP200
RKP201
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