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    RJP63 Search Results

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    RJP63 Price and Stock

    Rochester Electronics LLC RJP63F3ADPP-B1-T2F

    N CH IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP63F3ADPP-B1-T2F Bulk 15,929 141
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    • 1000 $2.14
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    Rochester Electronics LLC RJP63K2DPK-M2-T0

    DISCTRETE / POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP63K2DPK-M2-T0 Bulk 13,082 39
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    • 100 $7.8
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    Rochester Electronics LLC RJP63G4DPE-00-J3

    N CH IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP63G4DPE-00-J3 Bulk 1,776 107
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    • 1000 $2.83
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    Rochester Electronics LLC RJP63F3DPP-Z0-T2

    N CH IGBT
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    DigiKey RJP63F3DPP-Z0-T2 Bulk 1,432 119
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    • 1000 $2.54
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    Rochester Electronics LLC RJP63K2DPP-MZ-T2

    DISCTRETE / POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJP63K2DPP-MZ-T2 Bulk 452 125
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    • 1000 $2.4
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    RJP63 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJP63F3

    Abstract: RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 R07DS0321EJ0200
    Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0321EJ0200 Rev.2.00 May 26, 2011 Features • • • • • Trench gate and thin wafer technology G6H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ


    Original     		RJP63F3DPP-M0 O-220FL R07DS0321EJ0200 PRSS0003AF-A) O-220FL) RJP63F3 RJP63F rjp63f3dpp RJP63F3DPP-M0 rjp63 PDF

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL) PDF

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 35A6
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 35A6 PDF

    RJP63k2

    Abstract: rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		RJP63K2DPP-M0 O-220FL R07DS0468EJ0200 PRSS0003AF-A) O-220FL) RJP63k2 rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2 PDF

    R07DS0321EJ0200

    Abstract: RJP63F3DPP-M0
    Text: Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0321EJ0200 Rev.2.00 May 26, 2011 Features • • • • • Trench gate and thin wafer technology G6H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ


    Original     		RJP63F3DPP-M0 R07DS0321EJ0200 O-220FL PRSS0003AF-A) O-220FL) R07DS0321EJ0200 RJP63F3DPP-M0 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF