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    RJK1575DPA Search Results

    RJK1575DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK1575DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 150V 25A 48Mohm Wpak3F) Visit Renesas Electronics Corporation
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    RJK1575DPA Price and Stock

    Renesas Electronics Corporation RJK1575DPA-00-J5A

    MOSFET N-CH 150V 25A WPAK
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    DigiKey RJK1575DPA-00-J5A Reel 3,000 3,000
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    RJK1575DPA-00-J5A Cut Tape 1,553 1
    • 1 $4.36
    • 10 $2.876
    • 100 $4.36
    • 1000 $1.55635
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    RJK1575DPA-00-J5A Digi-Reel 1
    • 1 $4.36
    • 10 $2.876
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    • 1000 $1.55635
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    Renesas Electronics Corporation RJK1575DPA-00#J5A

    Trans MOSFET N-CH 150V 25A 8-Pin WPAK Embossed T/R - Tape and Reel (Alt: RJK1575DPA-00#J5A)
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    Avnet Americas RJK1575DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK1575DPA-00#J5A
    • 1 $3.97
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    • 100 $1.94
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    Verical RJK1575DPA-00#J5A 2,690 6
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    Chip1Stop RJK1575DPA-00#J5A Cut Tape 2,690
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    Renesas Electronics America RJK1575DPA-00#J5A Tape & Reel (TR) 4,553 1
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    • 10 $2.876
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    RJK1575DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK1575DPA-00#J5A Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V WPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0100 Rev.1.00 Jul 27, 2012 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)


    Original     		PDF RJK1575DPA R07DS0858EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1575DPA 150V - 25A - MOS FET High Speed Power Switching R07DS0858EJ0200 Rev.2.00 Jan 08, 2013 Features • Very low on-resistance RDS on = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)


    Original     		PDF RJK1575DPA R07DS0858EJ0200 PWSN0008DE-A

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1