BP402012H
Abstract: SP402012H SP402012L bp402024h SP4020
Text: DC 4020 SIZE : 40x/10*20mm 1,57"xl .57"x0.79' C O N ST R U C T IO N : Gloss fiber reinforced plastic: Im peller a n d housing PBT are U l 94V -0 rating OPER AT IN G TEMPERATURE : Ball b e a rin g - 3 0 'C to +75’C S le e v e b e a rin g - I Q*C to -r70‘C
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40x40x20mm
BP402012L
SP402024L
8S402024L
BP402012M
SP402012M
BS402012M
BP402024M
SP402024M
BS402024M
BP402012H
SP402012H
SP402012L
bp402024h
SP4020
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Untitled
Abstract: No abstract text available
Text: W O U N D IN D U C T O R C H IP S TYPE NL WIC FEATURES • E xc e lle n t s o ld e ra b ility b y re flo w s o ld e rin g , flo w s o ld e rin g o r • In d u c ta n c e o f 0.01 to 1 0 0 p H (N L 1 0 0 8 ), 0.01 to 2 2 0 p H (N L 1 2 ! 0) s o ld e rin g iron .
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NL453232-101JT
NL453232-121JT
NL453232-151JT
NL453232-181JT
NL453232-221JT
IML453232-271JT
NL453232-331JT
NL453232-391JT
NL453232-471JT
NL453232-561
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SP802512H-03
Abstract: SP802512M-03 BP802524M-03 SP802524M-03 BP802524H-03 BP8-02 sp802524h SP8025121-03 80X80X25 SP802524H-03
Text: DC 8025-03 SIZE : 80x80x25m m 3.15“x3.15"x0.98M C O N S T R U C T IO N : G la s s fib e r r e in fo r c e d p lastic: Im p eller a n d h o u sin g PBT a r e UL 9 4 V -0 ra tin g O P E R A T IN G TEM PERATURE : Ball b e a rin g - 30*0 t o + 75*C S le e v e b e a rin g
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80x80x25mm
8P802524L-03
SP802524L-03
BS802524L-03
BP802524M-03
SP802524M-03
8S802524M-03
BP802524H-03
SP802524H-03
8S802524H-03
SP802512H-03
SP802512M-03
BP8-02
sp802524h
SP8025121-03
80X80X25
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a 104 g
Abstract: P300D
Text: OTHER PRODUCTS Ceramic Substrate < O u r h ig h p re c isio n th ic k film p rin tin g te c h n o lo g y w here A g -P d b a se d c o n d u cto rs, low h ig h -fre q u en c y loss A g -P t b a se d c o n d u cto rs and C u ba se d c o n d u cto rs c an be p rin ted o n 9 6% su b strates>
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200ppm
a 104 g
P300D
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Untitled
Abstract: No abstract text available
Text: Configuration EPROMs for FLEX Devices June 1996, ver. 5 Data Sheet Features S erial E PR O M fam ily fo r c o n fig u rin g FLEX d ev ice s S im p le, e asy -to -u se 4 -p in in terfa ce to FLEX d ev ice s L ow c u rre n t d u rin g c o n fig u ra tio n a n d n e a r-z e ro s ta n d b y c u rre n t
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).
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SB20-05Z
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LB1294
Abstract: No abstract text available
Text: O rd e rin g n u m b e r : EN 1 1 6 3 C Monolithic Digital 1C LB1294 6-Channel Driver Array Features . 6 independent Darlington drivers . High voltage 60V , high output source current (60mA) . Ideally suited for interface between different supply voltage systems
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1163C
LB1294
LB1294
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N and P MOSFET
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN 4895 _ FX855 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu re s • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching
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FX855
FX855
2SK1470
SB05-09,
N and P MOSFET
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tda 2038
Abstract: 2SA417 2SA1417 2SC3647
Text: O rd e rin g n u m b e r: EN 2006A 2SA1417/2SC3647 N o .2006A SA W O PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . Highbreakdown voltage and large current capacity. . Fastswitching time.
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2SA1417/2SC3647
2SA1417
250mm2
tda 2038
2SA417
2SA1417
2SC3647
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r:EN 1044B LB1291 NO.1044B Monolithic Digital IC SANYO i 8-Channel Driver Array The LB1291 has been designed for interfacing between low level digital devices and fluorescent display tubes. Its 8-channel independent Darlington output
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1044B
LB1291
LB1291
5V/30mA
DIP20H
DIP16F
DIP16
MFP30S
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CQ 523
Abstract: cq 531 mc 5357 Z0 607 2SC5245 FC157 s22L transistor but 607 cq 765 NPN/CQ 523
Text: O rd e rin g n u m b e r: EN5433 _ FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications F eatu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN5433
FC157
FC157
2SC5245,
CQ 523
cq 531
mc 5357
Z0 607
2SC5245
s22L
transistor but 607
cq 765
NPN/CQ 523
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2SC2078
Abstract: 2sc2078 Transistor RF POWER TRANSISTOR NPN 2sc2078 2SC207 68p33 2sc207827mhz
Text: O rde rin g n u m b e r :EN 462E 2SC2078 NPN Epitaxial Planar Silicon Transistor 2 7MHz RF Power Amp Applications Absolute Haximum Ratings at Ta=25°C Collector-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEBO Collector Current
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2SC2078
27MHz
2SC2078
2sc2078 Transistor
RF POWER TRANSISTOR NPN 2sc2078
2SC207
68p33
2sc207827mhz
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H 7057
Abstract: "multiple aperture Window Discriminator" Op Amp Circuit Collection 1978 H7057 Vishay Ultronix Grand Junction CO Q81, 1K zero crossing detector wein bridge oscillator FET circuit collection Vishay Ultronix Grand Junction CO Q81 adjustable Q notch filter
Text: SECTION 1 BASIC CIRCUITS Inverting Amplifier Non-Inverting Amplifier VOUT e b R2 VIN R1 VOUT e RIN e R1 R1 a R2 VIN R1 TL H 7057 – 2 TL H 7057 – 1 Difference Amplifier VOUT e R3 R1 a R2 a R4 Inverting Summing Amplifier J R1 V R4 2b R2 V1 R1 VOUT e b R4
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CA06COM-E
Abstract: CA06COMF28 ca06com-f28 1-20UNEF-2B CA06COMPG14S ca06com-e10sl
Text: CA-COM Straight plug, C lass PG CAO6COM-PG-B CAO6 C O M -P G -B is a stra ig h t p lug fo r o ptio na l use o f heat sh rin k boots o r PG term in atio n s. It m ates w ith rece pta cles CAOOCOM-B, C A 0 1 C O M -B and C A 0 2C O M -E -B . Order Ref. Pin Insert*
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CA06COM-PG10SL-*
6COM-PG12S-*
CA06CC
M-PG18-*
M-PG20-*
CA06COM-PG22-*
CA06COM-PG24-*
CA06COM-PG28-*
CA06COM-PG32-*
CA06COM-E
CA06COMF28
ca06com-f28
1-20UNEF-2B
CA06COMPG14S
ca06com-e10sl
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Untitled
Abstract: No abstract text available
Text: bq2201 BENCHMARQ SRAM Nonvolatile Controller Unit Features General Description V Pow er m o n ito rin g a n d sw itc h in g for 3-volt b a tte ry -b a c k u p a p p lic a tio n s T he CMOS bq2201 SRAM Nonvolatile C ontroller U n it provides all necessary
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bq2201
bq2201
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MX34
Abstract: No abstract text available
Text: jk m. REV. S 0 E 9 0 I PS #-J! B DATE DCN NO. SECT. A-A w m ft & $ m APPD. a i CHK. DR. D E SC RI PT IO N & B APPD. 'ON ONIMVÜCD-É-gm^ Ik □ 4 1 1 ± 0 . B ( 26.32 (19.7) ±0.3 18.5 in o •H IDENTIFYING IfcJglJV — 9 MARK in . 0 m -H ■ m . rin S
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MXB40B2N
SJ038755)
L-1754
MX34032NF2
MX34
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AS23190
Abstract: T150R MK3P t250 black MS3367-6 MK3P I MK7P T250R9X2 T18R ASTM4066
Text: B u n d lin g a n d S e c u rin g C A B LE TIE PA R T N U M B ER SYSTEM The follow ing chartis m eantto help you understand H ellerm annTyton’s cable tie partnum bering system .N otevery cable tie type is available in every listed option.See cable tie partnum bercharts orcontactH ellerm annTyton form ore inform ation.
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T50L0C
T255S0H
T255R
T255M
AS23190
T150R
MK3P
t250 black
MS3367-6
MK3P I
MK7P
T250R9X2
T18R
ASTM4066
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31Q7A
Abstract: sanyo AG
Text: O rd e rin g n u m b e r : EN 31Q7A ; _ F C 8 0 1 No.3107A Silicon Epitaxial Planar Type Composite Diode for H igh-Speed Sw itching Applications Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting
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31Q7A
FC801
DCA015,
31Q7A
sanyo AG
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hybrid for catv amplifier
Abstract: BGD885
Text: Philips Semiconductors B i 1 3 ^ 5 3 *^ 3 1 0032331 T10 A P X ^^^^^reliminan^specification Hybrid CATV amplifier module — ^ BGD885 — N A1ER PHILIPS/DISCRETE PIN CONFIGURATION rIN N IN U -S U I l lb U FEATURES DESCRIPTION PIN • Excellent linearity • Extremely low noise
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BGD885
PINNING-SOT11
0D32333
BGD885
hybrid for catv amplifier
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75068G
Abstract: No abstract text available
Text: NEC ★ 13. /iPD75064, 75066, 75068, 75064 A , 75066(A), 75068(A) RECOMMENDED SOLDERING CONDITIONS S o ld e r th e /¿PD75064, 75066, 75068 u n d e r th e s o ld e rin g c o n d itio n s in d ic a te d b e lo w . For fu r th e r in fo rm a tio n on th e re c o m m e n d e d s o ld e rin g c o n d itio n s , r e fe rto in fo rm a tio n d o c u m e n t "S E M I
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uPD75064
uPD75066
uPD75068
PD75064,
IEI-1207)
75064G
PD75064CU
75068G
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30621
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN3Q62A FC 120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN3Q62A
FC120
2SC3142,
30621
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RG63B
Abstract: RG 393 coax cable 71W1A
Text: DPX A RIN C 404 DPX Coaxial Cable Reference Guide Rack and Panel Connectors For B KA *, DPX S eries Crimp, & Solder Reference MIL-C-17D & DPX N E /N A M IL-C-81659 Series Max. Oper. Temp. Range fC ) Max. Oper. Voltage (Volts RMS) Suggested A lt Cable Code
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MIL-C-17D
IL-C-81659
71W1A)
RG63B
RG 393 coax cable
71W1A
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN1932B A pplications • High frequency rectification switching regulators, converters and choppers . F e a tu r e s • Low forward voltage (Vp max = 0.75V). • F ast reverse recovery time (trr max = 10ns). • Low switching noise.
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EN1932B
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Untitled
Abstract: No abstract text available
Text: FEATURES PSM Series • 750 p ie ce s per 13.5 inch reel, 32m m tape High-Current Surface-Mount Inductors • Flexible J-bend term inal or su p erior solder-joint integrity Recessed-foot mount • R e c e ss e d b a se for e a sy clean up after reflow so ld e rin g
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20EA473K
20EA563K
20EA683K
20EA822K
20EA823K
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