RHF1252CM Search Results

Contextual Info: RHF1252CM Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)4 V(BR)GSS (V) I(D) Max. (A)85 P(D) Max. (W)200m Maximum Operating Temp (øC)125 I(DSS) Min. (A)12m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.

RHF1204CM

Abstract: RHF1205CM RHF1251CM RHF1252CM
Contextual Info: GaAs Devices I 7026^ G D O V T B T TT2 •■ RHH ■Ultra—Low Noise Hetero Structured In GaAs FET Absolute maximum ratings (Ta=25’C) Type Electrical characteristics (Ta=25ftC) Application Vos (V) Id PD (mW) Tch OC) PG Typ. (dB) NF Typ. (dB) f (GHz)

Contextual Info: mum G a A s D e v ic e s • Hyper F E T Hetero Structured InGaAs FET Ultra-Low Noise H y p e r FET CST iDss(mA) lYtsl(ms) R eference catalogue 12.0 1 0 -7 0 30 and over — 12.0 1 0 -7 0 30 and over — 12.0 1 2 -6 0 30 and over — 30 and over — 30 and over

RCM2008R

Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88