RFHA1020 Search Results

RFHA1020 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFHA1020PCBA-410		RF Micro Devices	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RFHA1020 PA		Original	PDF
RFHA1020SQ		RF Micro Devices	RF Amplifiers, RF/IF and RFID, RF AMP 280W 1.4GHZ		Original	PDF

RFHA1020 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1020 DS120508
Untitled Abstract: No abstract text available Text: RFHA1020 RFHA1020 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high	Original	PDF	RFHA1020 RFHA1020 DS131021
rfha1020 Abstract: No abstract text available Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation	Original	PDF	RFHA1020 RFHA1020 DS110719
ECJ2VB1H104K Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10 Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1020 RFHA1020 DS120508 ECJ2VB1H104K air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
RF565-2 Abstract: 440 transistors Text: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density	Original	PDF	RF565-2 RF56age 50-operation 440 transistors
VCO-102 Abstract: NBB-502 spf-5189 RF5643wda cxe-2089 Text: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high	Original	PDF
Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	PDF	11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
RF565-2 Abstract: No abstract text available Text: RFMD . High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high power density	Original	PDF	RF565-2