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    RF1S530SM9A Search Results

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    RF1S530SM9A Price and Stock

    Rochester Electronics LLC RF1S530SM9A

    14A, 100V, 0.16OHM, N-CHANNEL PO
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    DigiKey RF1S530SM9A Bulk 314
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    RF1S530SM9A Bulk 314
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    Rochester Electronics LLC RF1S530SM9AS2457

    MOSFET N-CH
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    DigiKey RF1S530SM9AS2457 Bulk 314
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    Fairchild Semiconductor Corporation RF1S530SM9A

    14A, 100V, 0.16ohm, N-Channel Power MOSFET '
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    Rochester Electronics RF1S530SM9A 11,640 1
    • 1 $0.9208
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    Harris Semiconductor RF1S530SM9A

    14A, 100V, 0.16ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S530SM9A 800 1
    • 1 $0.9208
    • 10 $0.9208
    • 100 $0.8656
    • 1000 $0.7827
    • 10000 $0.7827
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    Harris Semiconductor RF1S530SM9AS2457

    N-Channel, Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1S530SM9AS2457 800 1
    • 1 $0.9208
    • 10 $0.9208
    • 100 $0.8656
    • 1000 $0.7827
    • 10000 $0.7827
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    RF1S530SM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S530SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S530SM9A Datasheets Context Search

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    TA17411

    Abstract: RF1S530 RF1S530SM RF1S530SM9A RF1S540SM TB334
    Text: RF1S530SM TM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF RF1S530SM TA17411. TA17411 RF1S530 RF1S530SM RF1S530SM9A RF1S540SM TB334

    RF1S530SM

    Abstract: TA17411 RF1S530 RF1S530SM9A RF1S540SM TB334
    Text: RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF RF1S530SM TA17411. O-263AB RF1S530SM TA17411 RF1S530 RF1S530SM9A RF1S540SM TB334

    RF1S540

    Abstract: No abstract text available
    Text: RF1S530SM Data Sheet [ /Title RF1S 530SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO263AB ) /Creator () February 2001 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		PDF RF1S530SM 530SM O263AB RF1S540