RF TRANSISTOR REFERENCE Search Results

RF TRANSISTOR REFERENCE Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

RF TRANSISTOR REFERENCE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET	Original	MRF9045MR1 RDMRF9045MR1	PDF
LL1608-FHN2K Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 RDMRFG35005MT1BWA LL1608-FHN2K	PDF
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30	PDF
MRFG35010M Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35010MT1BWA MRFG35010MT1 MRFG35010M	PDF
TVU012 Abstract: 420 NPN Silicon RF Transistor ASI10646 Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.	Original	TVU012 TVU012 420 NPN Silicon RF Transistor ASI10646	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	RDMRFG35003MT1BWA MRFG35003MT1	PDF
db14g Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35010MT1 MRFG35010MT1 RDMRFG35010MT1BWA db14g CDR33BX104AKWS T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M	PDF
TVU020 Abstract: RF Bipolar Transistor 2108-G ASI10648 Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband	Original	TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648	PDF
motorola sps transistor Abstract: MRF21010 Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010	PDF
MRFG35005MT1 Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35005MT1 MRFG35005MT1 RDMRFG35005MT1BWA CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA	PDF
a 4x transistor Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor Text: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using	Original	MBC13900PP/D MBC13900 MBC13900 a 4x transistor MOTOROLA TRANSISTOR 318M motorola rf Power Transistor motorola sps transistor	PDF
rf transistors amplifier design and matching network Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design	Original	ISL73096RH, ISL73127RH, ISL73128RH ISL73096RH ISL73096RH/ISL73127RH/ 800MHz 2500MHz) 10MHz 600MHz rf transistors amplifier design and matching network silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH 6 "transistor arrays" ic	PDF
j327 transistor Abstract: j327 J334 transistor Text: Freescale Semiconductor Technical Data Document Number: MMRF1017N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1017NR3 This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.	Original	MMRF1017N MMRF1017NR3 j327 transistor j327 J334 transistor	PDF

Q545 Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ	PDF
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.	Original	RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band	PDF
transistor t06 Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz transistor t06 RD00HHS1-101 lal04na1r0 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA	PDF
D55342M07B Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07 Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet	Original	MRFG35010NT1 MRFG35010MT1 D55342M07B 100B102JP500X rick miller MRFG35010M LL-210 D55342M07	PDF
transistor marking z11 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet	Original	MRFG35005NT1 MRFG35005MT1 transistor marking z11	PDF
GP 819 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819	PDF
LAL04NA Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems	PDF
Untitled Abstract: No abstract text available Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128	PDF
900mhz-1800mhz rf frequency amplifier circuit Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt	PDF
212J Abstract: rd30hvf Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	RD30HVF1 RD30HVF1 175MHz RD30HVF1-101 212J rd30hvf	PDF

RF TRANSISTOR REFERENCE Search Results

RF TRANSISTOR REFERENCE Result Highlights (5)

RF TRANSISTOR REFERENCE Datasheets Context Search

Untitled

LL1608-FHN2K

MG1007-42

MRFG35010M

TVU012

Untitled

db14g

TVU020

motorola sps transistor

MRFG35005MT1

Untitled

a 4x transistor

rf transistors amplifier design and matching network

j327 transistor

Q545

Untitled

transistor t06

D55342M07B

transistor marking z11

GP 819

LAL04NA

Untitled

900mhz-1800mhz rf frequency amplifier circuit

212J