Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005N
MRFG35005NT1
MRFG35005ANT1.
MRFG35005NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35005MT1
MRFG35005NT1.
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13009 TRANSISTOR equivalent
Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to
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MRFG35030R5/D
MRFG35030R5
13009 TRANSISTOR equivalent
D 13009 K
transistor M 9718
4221 motorola transistor
transistor E 13009
MRFG35030
transistor d 13009
MRFG35030R5
transistor 9718
transistor E 13009 equivalent
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marking 0619
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1
MRFG35005MT1
marking 0619
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8772 P
Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
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MRFG35003MT1/D
MRFG35003MT1
8772 P
motorola 10116
transistor 17556
A113
MRFG35003MT1
motorola 6809
PLD15
transistor 115 h 8772 p
17556 transistor
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RF FET TRANSISTOR 3 GHZ
Abstract: A113 MRFG35003NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N
MRFG35003NT1
RF FET TRANSISTOR 3 GHZ
A113
MRFG35003NT1
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Marking Z7 Gate Driver
Abstract: MRFG35005MT1 A113 MRFG35005NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35005MT1
MRFG35005NT1.
Marking Z7 Gate Driver
MRFG35005MT1
A113
MRFG35005NT1
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100B2R7CP500X
Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100HR3
MRF5S21100HSR3.
MRF5S21100LR3
MRF5S21100LSR3
100B2R7CP500X
AN1955
MRF5S21100HSR3
MRF5S21100L
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AN1955
Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3
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MRF5S21100H/D
MRF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
AN1955
CDR33BX104AKWS
MRF5S21100HSR3
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A113
Abstract: MRFG35005MT1 MRFG35005NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1
MRFG35005NT1
MRFG35005NT1
A113
MRFG35005MT1
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ATC 1184
Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1/D
MRFG35005MT1
ATC 1184
A113
MRFG35005MT1
C 4804 transistor
"class AB Linear"
z9 ma 814
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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RDMRFG35003MT1BWA
MRFG35003MT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110
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MRF5S21100H/D
MRF5S21100HR3
MRF5S21100HR3
MRF5S21100HSR3
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Untitled
Abstract: No abstract text available
Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF5S21100H
MRF5S21100HR3
MRF5S21100HSR3
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ma 8630
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
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MRFG35003MT1
MRFG35003NT1
MRFG35003MT1
ma 8630
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A113
Abstract: MRFG35005ANT1 MRFG35005NT1 MM 5058
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005N
MRFG35005NT1
A113
MRFG35005ANT1
MRFG35005NT1
MM 5058
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Marking Z7 Gate Driver
Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N
MRFG35003NT1
MRFG35003ANT1.
MRFG35003NT1
Marking Z7 Gate Driver
A113
MRFG35003ANT1
transistor 8772
TC 8644
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ATC 1184
Abstract: A113 MRFG35005MT1 tc 106-10
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
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MRFG35005MT1/D
MRFG35005MT1
ATC 1184
A113
MRFG35005MT1
tc 106-10
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LL1608-FHN2K
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35005MT1
RDMRFG35005MT1BWA
LL1608-FHN2K
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35003MT1
MRFG35003NT1.
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D55342M07B
Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet
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MRFG35010NT1
MRFG35010MT1
D55342M07B
100B102JP500X
rick miller
MRFG35010M
LL-210
D55342M07
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. H suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3
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MRF5S21100L/D
MRF5S21100LR3
MRF5S21100LSR3
MRF5S21100HR3
MRF5S21100HSR3.
MRF5S21100LR3
MRF5S21100LSR3
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A1943
Abstract: A1943 transistor
Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1
A1943
A1943 transistor
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