RF TRANSISTOR IMPEDANCE MATCHING Search Results

TVU012

Abstract: 420 NPN Silicon RF Transistor ASI10646
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.

TVU020

Abstract: RF Bipolar Transistor 2108-G ASI10648
Contextual Info: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband

nte352

Abstract: w65 transistor
Contextual Info: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and

SD1536-08

Abstract: TACAN
Contextual Info: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching

TACAN transistor

Contextual Info: SD1520-02 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI SD1520-02 is Designed for IFF, DME and TACAN applications. A .1 0 0 x 4 5 ° FEATURES: C • Internal impedance matching • PG = 10 dB at 1.0 W/1150 MHz • Omnigold Metalization System

mda540

Abstract: BLV100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Contextual Info: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with

433.92mhz receiver

Contextual Info: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the

433.92mhz rf receiver

Abstract: 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER
Contextual Info: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the

c55 siemens

Abstract: SIEMENS saw filter 433.92mhz rf receiver B3550 UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw
Contextual Info: Siemens Matsushita Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the

TH720XX

Abstract: rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter" AN720xx-PA
Contextual Info: Application Note Transmitters TH720xx / Transceivers TH7122x PA Output Matching Almost all low-power RF transmitter ICs have an on-chip power amplifier stage where the output pin is either an open collector or open drain. The RF power amplifier stage of all Melexis transmitters is setup with a

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

71009 SB

Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
Contextual Info: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an

BLV98CE

Abstract: MDA459 MDA456
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171

ceramic capacitor 470 pf

Abstract: philips carbon film resistor philips transistor sot122 MCB117
Contextual Info: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12

RFSim99

Abstract: nfc antenna design guide nfc antenna nfc pcb antenna AN166510 nfc antenna design AN166510 - Amplifier antenna matching calculation AN142522 nxp nfc nfc antenna matching
Contextual Info: AN142522 RF Amplifier for NXP Contactless NFC Reader IC's Rev. 2.2 — 25 November 2008 Application note Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader, NFC Abstract This application notes provides guidance on antenna and RF amplifier

MRA359

Abstract: MDA536 BLV103 MRA364
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for

transistor GaN

Contextual Info: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching

SOT423

Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION

TIC 122 Transistor

Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy

AN721

Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
Contextual Info: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer

2N6083

Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
Contextual Info: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer

shunt reactor

Abstract: 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A
Contextual Info: Freescale Semiconductor Application Note AN721 Rev. 1, 10/2005 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors By: B. Becciolini