RF Transistor s-parameter
Abstract: RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise 2SC2570A RF TRANSISTOR 1.5 GHZ s-parameter RF POWER TRANSISTOR NPN RF Transistor s-parameter vhf low-noise amplifier 10GHZ TRANSISTOR 10GHZ Transistor s-parameter
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION •Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA
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2SC2570A
15mum
RF Transistor s-parameter
RF TRANSISTOR 10GHZ
RF TRANSISTOR 10GHZ low noise
2SC2570A
RF TRANSISTOR 1.5 GHZ
s-parameter RF POWER TRANSISTOR NPN
RF Transistor s-parameter vhf
low-noise amplifier 10GHZ
TRANSISTOR 10GHZ
Transistor s-parameter
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO
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MSC3130T1
MSC3130T1/D
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Untitled
Abstract: No abstract text available
Text: MSC3130T1 Preferred Device NPN RF Amplifier Transistor Surface Mount MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage VCBO 15 Vdc Collector−Emitter Voltage VCEO 10 Vdc Emitter−Base Voltage VEBO 3.0 Vdc IC 50 mAdc Symbol Max Unit
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MSC3130T1
MSC3130T1/D
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Untitled
Abstract: No abstract text available
Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FL
TGF2819-FL
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Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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Untitled
Abstract: No abstract text available
Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FS
TGF2819-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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Untitled
Abstract: No abstract text available
Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-SG
T2G6001528-SG
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-SG
T2G6001528-SG
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FS
T1G4012036-FS
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Abstract: No abstract text available
Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4012036-FL
T1G4012036-FL
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Untitled
Abstract: No abstract text available
Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G3000532-SM
T1G3000532-SM
30MHz
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transistor equivalent table 557
Abstract: 21045F
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
DS04-204RFPP
PB04-101RFPP)
transistor equivalent table 557
21045F
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ATC600S3R0
Abstract: ATC600S0R3 ATC600S0R2 37C0064
Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G6003028-FL
T1G6003028-FL
ATC600S3R0
ATC600S0R3
ATC600S0R2
37C0064
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AGR18030EF
Abstract: JESD22-C101A
Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
AGR18030EF
DS04-204RFPP
PB04-101RFPP)
JESD22-C101A
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Abstract: No abstract text available
Text: TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •
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TQP0103
TQP0103
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SKY65050-372LF
Abstract: S1408 S1410 VT47 S1417
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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SKY65050-372LF:
SKY65050-372LF
200967E
S1408
S1410
VT47
S1417
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SKY65050-372LF
Abstract: No abstract text available
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations Test instrumentation LNA for GPS receivers Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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SKY65050-372LF:
SC-70
J-STD-020)
SKY65050-372LF
200967E
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Untitled
Abstract: No abstract text available
Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1
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T1G6003028-FS
T1G6003028-FS
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Untitled
Abstract: No abstract text available
Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G6003028-FL
T1G6003028-FL
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ATC600S0R
Abstract: No abstract text available
Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G6003028-FS
T1G6003028-FS
ATC600S0R
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all transistor datasheet
Abstract: TQP0102-PCB
Text: TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Applications • • • • Small Cell Base Station Microcell Base Station Driver Active Antenna General Purpose Applications 16 Pin 3x3mm QFN Product Features • • • • • Functional Block Diagram Operating Frequency Range: DC to 4 GHz
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TQP0102
TQP0102
all transistor datasheet
TQP0102-PCB
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