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    ATC600S0R Price and Stock

    American Technical Ceramics Corp ATC600S0R4AW250XT

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    Bristol Electronics ATC600S0R4AW250XT 3,921
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    American Technical Ceramics Corp ATC600S0R5BT250XT

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    Bristol Electronics ATC600S0R5BT250XT 1,502
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    Vyrian ATC600S0R5BT250XT 1,164
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    American Technical Ceramics Corp ATC600S0R3BT250XT

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    Bristol Electronics ATC600S0R3BT250XT 398
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    American Technical Ceramics Corp ATC600S0R2AT250T

    CERAMIC CAPACITOR, CERAMIC, 250V, 25% +TOL, 25% -TOL, C0G, 30PPM/CEL TC, 0.0000002UF, SURFACE MOUNT, 0603
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    Quest Components ATC600S0R2AT250T 2,128
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    ATC600S0R2AT250T 358
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    ATC600S0R2AT250T 240
    • 1 $0.805
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    American Technical Ceramics Corp ATC600S0R1AW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.0000001 uF, SURFACE MOUNT, 0603
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    Quest Components ATC600S0R1AW250XT 462
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    ATC600S0R1AW250XT 400
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    ATC600S0R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE PDF

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS b0912 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS TQGaN25 PDF

    ATC600S6R8BT250

    Abstract: GRM55DR61H106KA88 ATC600S0R ATC600S0R5BT250XT wimax spectrum mask AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 3, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage


    Original     		MD7IC2755N MD7IC2755N MD7IC2755NR1 MD7IC2755GNR1 ATC600S6R8BT250 GRM55DR61H106KA88 ATC600S0R ATC600S0R5BT250XT wimax spectrum mask AN1977 AN1987 PDF

    ATC600S10

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10 PDF

    HEADER7X2

    Abstract: 915055 circuit diagram for sma 4038 ic sma 4038 capacitor 10nj MURATA-LQH32MN sma003 BMIS-203 ATC600S0R 6CW2
    Text: Dolphin Frequency Hopping Spread Spectrum Evaluation Kit Hardware and Software User’s Guide 2005 SLLU090F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		SLLU090F HEADER7X2 915055 circuit diagram for sma 4038 ic sma 4038 capacitor 10nj MURATA-LQH32MN sma003 BMIS-203 ATC600S0R 6CW2 PDF

    ATC600S3R0

    Abstract: ATC600S0R3 ATC600S0R2 37C0064
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064 PDF

    Ab3230

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 2, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500-2700 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		MD7IC2755N MD7IC2755NR1 MD7IC2755GNR1 MD7IC2755N Ab3230 PDF

    ATC600S2R7BT250XT

    Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth


    Original     		MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT PDF

    SMD-B 053

    Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
    Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:


    Original     		FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0 PDF

    ATC600S0R5BT250XT

    Abstract: ZO 607 MA A114 A115 AN1977 AN1987 C101 JESD22 ATC600S0R J851
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 0, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on - chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage


    Original     		MD7IC2755N MD7IC2755N MD7IC2755NR1 MD7IC2755GNR1 ATC600S0R5BT250XT ZO 607 MA A114 A115 AN1977 AN1987 C101 JESD22 ATC600S0R J851 PDF

    ATC600S0R

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS ATC600S0R PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FL T1G6003028-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1


    Original     		T1G6003028-FL T1G6003028-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 3, 9/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage


    Original     		MD7IC2755N MD7IC2755N MD7IC2755NR1 MD7IC2755GNR1 PDF

    MD7IC2755N

    Abstract: atc600s0r5bt250xt ATC600S6R8BT250XT ATC600S0R GSC356 J851
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2755N Rev. 1, 7/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on - chip matching that makes it usable from 2500 - 2700 MHz. This multi - stage


    Original     		MD7IC2755N MD7IC2755NR1 MD7IC2755GNR1 MD7IC2755N atc600s0r5bt250xt ATC600S6R8BT250XT ATC600S0R GSC356 J851 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • 1 1 Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers 1 1 Product Features1


    Original     		T1G6003028-FS T1G6003028-FS PDF

    transistor SMD P2F

    Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
    Text: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F smd p2f transistor atc600s PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FL T2G6003028-FL TQGaN25 PDF

    Msp430U

    Abstract: 915055 MSP430U275 TRF6903 MSP430 MSP430C1351 MSP430F135 BMI-S-205 4P SOT323 sip-6p
    Text: Dolphin Frequency Hopping Spread Spectrum Evaluation Kit Hardware and Software User’s Guide 2004 SLLU090 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		SLLU090 Msp430U 915055 MSP430U275 TRF6903 MSP430 MSP430C1351 MSP430F135 BMI-S-205 4P SOT323 sip-6p PDF