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    RF TOROIDS DESIGN CONSIDERATIONS DATA SHEET Search Results

    RF TOROIDS DESIGN CONSIDERATIONS DATA SHEET Result Highlights (5)

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    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    RF TOROIDS DESIGN CONSIDERATIONS DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BS 3938

    Abstract: EI core transformer interposing CT 11KV Transformer specification l3005 transformer EI lamination 220V ferrite core transformer 62083 EI transformer 70012
    Text: THE ADVANTAGES AND BENEFITS OF USING AMVECO TOROIDAL TRANSFORMERS On this page you can learn about the advantages and benefits of using our toroidal transformers. First we would like to list four features that are unique to AMVECO and its line of toroidal transformers. Four features that you will surely benefit from.


    Original     		94-V2) BS 3938 EI core transformer interposing CT 11KV Transformer specification l3005 transformer EI lamination 220V ferrite core transformer 62083 EI transformer 70012 PDF

    l3005

    Abstract: EI core transformer interposing CT L0540 transformer EI lamination BS 3938 TOROIDS Design Considerations EI transformer a 70084 100 VA 230v 50 Hz CENTER TAP transformer
    Text: THE ADVANTAGES AND BENEFITS OF USING AMVECO TOROIDAL TRANSFORMERS On this page you can learn about the advantages and benefits of using our toroidal transformers. First we would like to list four features that are unique to AMVECO and its line of toroidal transformers. Four features that you will surely benefit from.


    Original     		94-V2) l3005 EI core transformer interposing CT L0540 transformer EI lamination BS 3938 TOROIDS Design Considerations EI transformer a 70084 100 VA 230v 50 Hz CENTER TAP transformer PDF

    toroid ferrite smps inductor

    Abstract: L2ID 1800R 18R224 18R334 18R474 HP4191A HP4192A lt1073 equivalent ic LT1110-12
    Text: INDUCTOR APPLICATIONS Contents terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 data sheet parameters . . . . . . . . . . . . . . . . . . . . . . 2 other parameters . . . . . . . . . . . . . . . . . . . . . . . . . 3 inductor types . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF

    toroid ferrite smps inductor

    Abstract: pot core inductor emi TOROIDS Design Considerations smps inductor filter design LT1073-5 1800R 18R224 18R334 18R474 HP4192A
    Text: INDUCTOR APPLICATIONS Contents terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-46 data sheet parameters . . . . . . . . . . . . . . . . . . . . . . 3-46 other parameters . . . . . . . . . . . . . . . . . . . . . . . . . 3-47 inductor types . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-47


    Original     		PDF

    Granberg

    Abstract: motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor
    Text: Order this document by AN762/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN762 LINEAR AMPLIFIERS FOR MOBILE OPERATION Prepared by: Helge O. Granberg RF Circuits Engineering INTRODUCTION The three versions of the amplifier described here are intended mainly for amateur radio applications, but are


    Original     		AN762/D AN762 MRF455 MRF460 MRF453 MRF454 MRF458 MRF421 Granberg motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor PDF

    magnetic core ferroxcube 3E2A

    Abstract: ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A Stackpole 57-9322-11 philips choke vk200 Motorola AN-546 magnetic core philips 3E2A A73D
    Text: Order this document by AN758/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN758 A TWO-STAGE 1 kW SOLID-STATE LINEAR AMPLIFIER Prepared by: Helge O. Granberg RF Circuits Engineering INTRODUCTION GENERAL DESIGN CONSIDERATIONS This application note discusses the design of 50 W and


    Original     		AN758/D AN758 50-Ohm magnetic core ferroxcube 3E2A ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A Stackpole 57-9322-11 philips choke vk200 Motorola AN-546 magnetic core philips 3E2A A73D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		MRF151G/D MRF151G MRF151G/D* PDF

    TOROIDS Design Considerations

    Abstract: 330uH Magnetic Core Inductor 1800R 18R224 18R334 18R474 330E 363K passive process inductor HP4192A
    Text: INDUCTORS Application Notes CONTENTS 1 Terminology 2 Parameters 3 Other parameters 4 Inductor types 5 Advantages of passive networks 6 Inductors in passive filters 7 Inductors in switched mode power supplies SMPS 8 Basic topography 9 Inductor selection 10 Design example


    Original     		PDF

    MRF141G

    Abstract: TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter CO-AX mosfet HF amplifier motorola AN211A MRF141G data sheet AN211A
    Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		MRF141G/D MRF141G MRF141G/D* MRF141G TOROIDS Design Considerations arco 403 arco 406 how to build vhf tv transmitter CO-AX mosfet HF amplifier motorola AN211A MRF141G data sheet AN211A PDF

    MRF151G

    Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		MRF151G/D MRF151G MRF151G/D* MRF151G MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors PDF

    MRF151G

    Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		16dBTyp) MRF151G BH Rf transistor mrf151g 300 MRF151G hf amplifier PDF

    application MOSFET transmitters fm

    Abstract: TOROIDS Design Considerations mrf141g
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF

    MRF151G

    Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations PDF

    arco 406

    Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		MRF141G MRF141G arco 406 transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		MRF141G PDF

    MRF151G

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		MRF151G MRF151G PDF

    TOROIDS Design Considerations

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF

    mosfet te 2304

    Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory PDF

    j130 fet

    Abstract: MRF27SG
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND


    OCR Scan     		MRF275G MRF275G j130 fet MRF27SG PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		RF175GV MRF175GU MRF175G MRF176 MRF17SGU MRF175GV PDF

    planar transformer theory

    Abstract: Unelco
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Fie ld -E ffe ct Transistors MRF176GU M RF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		MRF176GU MRF176GV MRF176G MRF176 MRF176GU MRF176GV planar transformer theory Unelco PDF

    uhf 150w mosfet

    Abstract: PS1517 25 ohm semirigid
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan     		MRF176GU MRF176GV MRF176G MRF176GU MRF176GV uhf 150w mosfet PS1517 25 ohm semirigid PDF

    ferroxcube toroids

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push


    OCR Scan     		MRF175GV MRF175GU MRF175G MRF176 MRF175GV MRF175GU ferroxcube toroids PDF

    motorola AN211A

    Abstract: 42256 planar transformer theory
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc


    OCR Scan     		MRF275G MRF275G motorola AN211A 42256 planar transformer theory PDF