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    RF NPN POWER TRANSISTOR L BAND Search Results

    RF NPN POWER TRANSISTOR L BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF NPN POWER TRANSISTOR L BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2094

    Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC2094 175MHz 175MHz. IMD-30dBc 15WPEP 2SC2094 100mA 175MHz transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209

    2SC1946

    Abstract: transistor 2sc1946
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN E P ITA X IA L PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC1946 2SC1946 175MHz 175MHz. T-31E transistor 2sc1946

    2sc1969

    Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm


    OCR Scan     		PDF 2SC1969 2SC1969 27MHz O-220 27MHz. 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance

    2SC2237

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC2237 175MHz 175MHz. 22SUBISHI 2SC2237 175MHz

    2SC730

    Abstract: transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on V H F band mobile radio applications. Dim ensions in mm


    OCR Scan     		PDF 2SC730 2SC730 150MHz transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020

    2SC1967

    Abstract: mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. FEATURES


    OCR Scan     		PDF 2SC1967 2SC1967 470MHz 470MHz. T-31E 470MH mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz

    2SC2131

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2131 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC2131 2SC2131 500MHz 150MHz 450MHz) 100pF, 01/iF 200/iF 01/iF

    2SC908

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC908 2SC908 500MHz 500MHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC2237 2SC2237 175MHz.

    2SC1971

    Abstract: RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1971 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions i 0 3.6 ± 0.2 9.1 ± 0.7


    OCR Scan     		PDF 2SC1971 2SC1971 175MHz O-220 175MHz. 175MHz 175MH2 RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC908 2SC908 500MHz

    MRF221

    Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation
    Text: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.


    OCR Scan     		PDF MRF216 MRF221 2N6081 MRF221 wide band choke vk200 MRF216 VK200 VK200 ferrite broad band operation

    RF POWER TRANSISTOR NPN

    Abstract: 2SC2627 2sc262 mitsubishi vcb sma 9s1 8-32UNC-3A
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2627 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2627 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2627 175MHz 175MHz, 175MHz 2SC2627 175MH2 RF POWER TRANSISTOR NPN 2sc262 mitsubishi vcb sma 9s1 8-32UNC-3A

    2SC741

    Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm


    OCR Scan     		PDF 2SC741 Gpeii13dB 150MHz 2SC741 transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor

    2SC2097

    Abstract: transistor 91 330 T40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, T-40E transistor 91 330 T40E

    transistor 2sc1972

    Abstract: 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ signed for RF power amplifiers on VHF band mobile radio applications. Dimensions in mm 03.6 ± 0.2


    OCR Scan     		PDF 2SC1972 2SC1972 175MHz O-220 175MHz. transistor 2sc1972 2SC1972 equivalent J3 transistor RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


    OCR Scan     		PDF 2SC20S3 2SC2053 175MHz 2SC2053

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. D im e n s io n s in m m


    OCR Scan     		PDF 2SC1967 2SC1967 470MHz 470MHz.

    2SC3133

    Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7


    OCR Scan     		PDF 2SC3133 2SC3133 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN

    2SC2056

    Abstract: RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band portable or hand-held radio applications. D im e n sio n s in m m


    OCR Scan     		PDF 2SC2056 175MHz 175MHz RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2629 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2629 2SC2629

    2SC2629

    Abstract: 2sc262 vco 17.5mhz
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2629 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X


    OCR Scan     		PDF 2SC2629 175MHz 175MHz, 175MHz 2SC2629 175MH2 2sc262 vco 17.5mhz

    2SC3628

    Abstract: T-46
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN E P IT A X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm FEATURES


    OCR Scan     		PDF 2SC3628 175MHz 175MHz. T-46

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB


    OCR Scan     		PDF 2SC3908 2SC3908 30MHz, 30MHz.