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    2SC209 Search Results

    2SC209 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC209 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC209 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC209 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC209 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC209 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC209 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC209 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC209 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC209 Unknown Cross Reference Datasheet Scan PDF
    2SC2090 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2091 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2091 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2091 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2091 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC2091 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2091 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2091 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC2091 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2091 Renesas Technology Silicon NPN Epitaxial Transistor Scan PDF
    2SC2092 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF

    2SC209 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC2097 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)7.5 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC2097

    2SC2098

    Abstract: No abstract text available
    Text: <^£.mi-dondiictoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Un i t ; nun 2SC2098 M A X I M U M RATINGS SYMI10L RATING UN I T Vcno 70 V VCEH 70 V vrno 1 V C'ollfL-tur C u r r e n t


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    PDF 2SC2098 SYMI10L 2SC2098

    Untitled

    Abstract: No abstract text available
    Text: 2SC2098 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70ã V(BR)CBO (V)70 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC2098

    2SC288A

    Abstract: 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC201 20 300 650 2SC202 80 300 650 2SC203 40 200 350 2SC204 30 5 200 350 2SC205 80 200 350 2SC206 20 2 25 200 2SC207 20 3 25 200 2SC208 20 3 25 200 2SC209 20 3 25 200 2SC210


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    PDF 2SC201 2SC202 2SC203 2SC204 2SC205 2SC206 2SC207 2SC208 2SC209 2SC210 2SC288A 2SC202 2sc281 2SC233 2SC274 2SC273 2sc257 2SC219 2SC225 2sc246

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2SC2097

    Abstract: transistor 91 330 T40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1


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    PDF 2SC2097 2SC2097 30MHz 30MHz, T-40E transistor 91 330 T40E

    2SC2879

    Abstract: 150PEP
    Text: high-Free O utput Transistors F5 Package €3 Po W HF/CB N . 2SC2395 20PEP 2SC2099 30MHz 012.7 09.5 10-12PEP 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* 200PEP 2SC2652" *: Vcc=28V Vcc=50V F5 Package Po(W) VHF 175MHz \ 012.7 □ 9.5 6 2SC2638 15 2SC2639 32


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    PDF 30MHz 10-12PEP 20PEP 60PEP 100PEP 150PEP 200PEP 2SC2395 2SC2099 2SC2290 2SC2879

    variable capacitor

    Abstract: 2SC2098 73b0 voltage variable capacitor citizen mhz capacitor variable
    Text: \ SEMICONDUCTOR TO S H I B A TRANSI S T O R 2SC2098 tó S S E O O TECHNICAL DATA SILICON' The 2SC2098 is designed for 2 5 ~ 5 0 M H s a mplifier applications RF power output 1 MIN. H i g h pcwor g ain 11 dB MIN. f=28Mffi< NPH EPITAXIAL. PLANAR R F power tfcc=i2V


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    PDF 2SC2098 2SC2098 50MHz Tc-25Â 28MHz -300pF variable capacitor 73b0 voltage variable capacitor citizen mhz capacitor variable

    2sc2094

    Abstract: transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2094 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES


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    PDF 2SC2094 175MHz 175MHz. IMD-30dBc 15WPEP 2SC2094 100mA 175MHz transistor 2sc2094 PW150 15WPEP transistor rf vhf 2SC209

    2sc2099

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE QQ Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20W pEP Gtïr = 12dB (Min.) Power Gain rj Q = 35% (Min.)


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    PDF 2SC2099 30MHz 28MHz --30dB 961001E 2sc2099

    2SC2098

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2098 C ITIZEN BAND AND HAM BAND UP TO 50MHz RF U n i t in m m POWER AMP L I F I E R APPLICATIONS. P3.6±Ü2 LOW SUPPLY V OLTAGE USE FEATURES: . R e c o m m e n d e d f o r 1 2 W ( P E P ) SS B C i t i z e n B a n d Transceiver Applications.


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    PDF 2SC2098 50MHz 28MHz 28MHz 150pF 300pF 100PF 200pF 2SC2098

    2SC2099

    Abstract: 2SC2099 equivalent 20Wpep 12ID 2sc2099 toshiba
    Text: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS Unit in mm LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain Gp = 12dB (Min.)


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    PDF 2SC2099 30MHz 28MHz 20Wpep 000MHz 001MHz 961001EAA2' 2SC2099 2SC2099 equivalent 20Wpep 12ID 2sc2099 toshiba

    2SC2097 equivalent

    Abstract: 2sc2097 transistor 2SC2097
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES


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    PDF 2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k 2SC2097 equivalent transistor 2SC2097

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm


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    PDF 2SC2094

    SC-1303

    Abstract: 2SC1312 2SC1335 2SC1303 2Sc1327 2SC1328 2sc1740s 2sc4640 2sc1313 2SC1476
    Text: - m % € Manuf. T y p e No. H $ SANYO TOSHIBA * 2 SC 1303 fö T * 2SC 13 0 4 3 2SC782 2SC934 1 m NEC i HITACHI * ± a tä T MATSUSHITA FUJITSU 2SC2323 =. s MITSUBISHI □ 111 — A ROHM 2SC2851 * 2SC 1306 1m 2SC1678 * 2 SC 1307 a 2SC2098 * 2SC 13 0 8 * 2 SC


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    PDF 2SC994 2SC2329 2SC2851 2SC782 2SC1678 ZSC2098 2SD820 2SD954 2SD819 00404U SC-1303 2SC1312 2SC1335 2SC1303 2Sc1327 2SC1328 2sc1740s 2sc4640 2sc1313 2SC1476

    2SC2099

    Abstract: 2SC2099 equivalent 22AF copper wire 20WPEP
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics • Output Power Po-20Wpj?p Minimum Gain Gpe=12dB Efficiency nc=35%(Min.)


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    PDF 2SC2099 28MHz Po-20Wpj -30dB -150pF 200pF 250pF 100/iF 150pF 2SC2099 2SC2099 equivalent 22AF copper wire 20WPEP

    2SC2092

    Abstract: CAPACITOR JL 1500 variable capacitor
    Text: 2SC2092 SILICO N NPN EPITAXIAL NPN HIGH FR EQ U EN C Y POW ER A M P LIFIER 1 — * B ase 2 • 3 V' 9 9 Collector 7 7 yi* (Flange) 3 .x i "/ 9 '• Em itter (Dimensions in mm) K« u u? * • i f ê f c U ï AB S OL U T E MAXIMUM RATIN GS ( T a - 25°C )


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    PDF O-220AB) 2SC2092 c-25CÂ 27MHz, 110pF CAPACITOR JL 1500 variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 Ç C 1 fl Q Q 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain


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    PDF 2SC2099 28MHz 20WpEP

    2SC2091

    Abstract: No abstract text available
    Text: 2SC2091 \£ * * * srM á *> y a > NPN X SILICON NPN EPITAXIAL HIGH FREQUENCY POWER AM PLIFIER 1. ; "/ 9 ’ Emitter 2. 3 1' 9 9 ' - Collector 3. X • Base Dimensions- in mm (JEDEC T O -1 2 6 MOD.) ABSOLUTE MAXIMUM RATINGS (7a=25°C @ Symbol o V 9 9 •


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    PDF O-126 2SC2091 Tc-25 Ta-25Â 27MHzt 02//F

    2SC2222

    Abstract: 2SC2093 2sc2103a 2SC2150 2SC2106 2SC2094 2SC2098 203d6 2SC2148 2sc2188
    Text: - 116 - MXËfê su z rfi 3$ Ta=25tî, *EP(ÏTc=25^ m Vq e q VcEQ Ic(oc) Pc Pc* (V) (V) (A) (ïï) (W) 0. 5 10 (Ta=25tî) & (max) Vc e (V) 20 200 6 0.1 20 100 5 4 20 185 5 5 28 2SC2094 H # HF PA 40 3.5 30 2000 2SC2097 H * HF PA 50 15 150 5000 2SC2098 * 2


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    PDF 2SC2093 2SC2094 2SC2097 2SC2098 27/50MHZ 2SC2099 30MHz 2SC2101 2SC2102 2SC2103A 2SC2222 2sc2103a 2SC2150 2SC2106 2SC2098 203d6 2SC2148 2sc2188

    2SC2094

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm for R F power amplifiers in V H F band mobile radio applications.


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    PDF 2SC2094 2SC2094

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N